K1626

2SK1628, 2SK1629 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3PL D G1 2 3 1. Gate 2. Drain 3. Source S 2SK1628, 2SK1629 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1628 2SK1629 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 450 500 ±30 30 120 30 200 150 –55 to +150 Unit V V A A A W °C °C 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage 2SK1628 V(BR)DSS 2SK1629 450 500 Gate to source breakdown voltage V(BR)GSS ±30 Gate to source leak current I GSS Zero gate voltage 2SK1628 IDSS drain current 2SK1629 — — Gate to source cutoff voltage VGS(off) Static Drain to source 2SK1628 RDS(on) on state resistance 2SK1629 2.0 — — Forward transfer admittance |yfs| 12 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage t d(on) tr t d(off) tf VDF — — — — — Body to drain diode reverse recovery time t rr — Note 1. Pulse test Typ Max —— —— — ±10 — 2...