K3277-01L

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 2SK3272-01L,S Trench Gate MOSFET N-channel MOS-FET 60V 6,5mΩ ±80A 135W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Symbol Rating Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage V DS ID I D(puls) VGS 60 ±80 ±320 +30 / -20 Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range E AV PD T ch T stg 613 135 150 -55 ~ +150 * L=0,13mH, VCC=24V Unit V A A V mJ* W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Symbol Test conditions Drain-Source Breakdown-Voltage BV DSS ID=1mA VGS=0V Gate Threshhold Voltage V GS(th) ID=10mA VDS=VGS Zero Gate Voltage Drain Current I DSS VDS=60V Tch=25°C VGS=0V Tch=125°C Gate Source Leakage Current I GSS VGS=±30V VDS=0V Drain Source On-State Resistance R DS(on) ID=40A VGS=40V Min. 60 2,5 Typ. Max. 3,0 1,0 10,0 10 5,0 3,5 100,0 500,0 100 6,5 Unit V V µA µA nA mΩ Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge g fs C...