Document
Ordering number:ENN5949A
N-Channel Silicon MOSFET
FTS2004
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · 4V drive. · Mounting height 1.1mm.
Package Dimensions
unit:mm 2147A
[FTS2004]
0.65 8 5
0.5 0.95
3.0
0.425
1
4 0.25
(0.95)
1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 7 : Source 0.125 8 : Drain SANYO : TSSOP8
4.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1%
Conditions
6.4
Ratings 30 ±20 4 25 1.3 150 –55 to +150
Unit V V A A W ˚C ˚C
Mounted on a ceramic board (1000mm2×0.8mm)
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=4A ID=4A, VGS=10V ID=4A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 1.0 5 8 36 58 460 250 120 46 78 Conditions Ratings min 30 10 ±10 2.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF
Marking : S2004
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30100TS (KOTO) TA-2144 No.5949-1/4
FTS2004
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=4A VDS=10V, VGS=10V, ID=4A VDS=10V, VGS=10V, ID=4A IS=4A, VGS=0 Ratings min typ 10 90 70 75 15 3 4 0.85 1.2 max Unit ns ns ns ns nC nC nC V
Switching Time Test Circuit
VIN VDD=15V ID=4A RL=3.75Ω D VOUT
10V 0V
VIN PW=10µs D.C.≤1%
G
FTS2004 P.G 50Ω S
6
I D - VDS
4.0V 6.0V 8.0V
10 9
ID - VGS
VDS=10V
5
10V
V
8
Drain Current, ID – A
4
3.0
Drain Current, ID – A
3.5
V
7 6 5 4 3
3
2
1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Drain-to-Source Voltage, VDS – V
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2
Gate-to-Source Voltage, VGS – V
100 90
| yf s | - I D
VDS=10V
R DS(on) - VGS
Ta=25°C
Forward Transfer Admittance, | yfs | – S
Static Drain-to-Source On-State Resistance, RDS(on) – mΩ
80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20
Ta=
C 75°
-25
°C
C 25°
ID=4A
Drain Current, ID – A
Gate-to-Source Voltage, VGS – V
75
1
°C
VGS=2.5V
2
25° C Ta= -25 °C
No.5949-2/4
FTS2004
100 90
R DS(on) - Ta
10 7 5 3
I F - VSD
VGS= 0
Static Drain-to-Source On-State Resistance, RDS(on) – mΩ
70 60 50 40 30 20 10 0 -60 -40 -20 0 20
I D=
=4V VGS 4A,
Forward Current, IF – A
80
2 1.0 7 5
0.1 7 5 3 2 0.01 0 0.1 0.2 0.3 0.4
40
60
80
100
120
140
160
0.5
Ta=7
0.6
0.7
-25°C
0.8 0.9
=10V A,VGS I D=4
5°C
25°C
3 2
1.0
Ambient Temperature, Ta – ˚C
10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0 5 10 15 20 25 30
Diode Forward Voltage, VSD – V
10
Ciss,Coss,Crss - VDS
f = 1MHz
VGS - Q g
VDS=10V ID =4A
Gate-to-Source Voltage, VGS – V
9 8 7 6 5 4 3 2 1 0 0
Ciss, Coss, Crss – pF
Ciss
Coss
Crss
2
4
6
8
10
12
14
16
Drain-to-Source Voltage, VDS – V
1000 7 5
Total Gate Charge, Qg – nC
SW Time - I D
VDD =15V VGS=10V
A S O
5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
I DP = 2 5 A
100µs
Switching Time, SW Time – ns
3
1m
ID=4A
100 7 5 3 2 10 7 5 3 2 1.0 7 0.1 2 3
td(off)
tf
Drain Current, ID – A
2
10
s
DC
10 0m s
ms
op
era
tr
td(on)
tio
n
Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (1000mm2×0.8mm)
2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
5
7 1.0
2
3
5
7 10
2
0.01 0.01
Drain Current, ID – A
1.6
Drain-to.