A1430 Datasheet (data sheet) PDF - Toshiba Semiconductor Semiconductor





A1430 Datasheet - 2SA1430

A1430   A1430  

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1430 Strobe Flas h Applications Medium Power Amplifier A pplications 2SA1430 Unit: mm • High DC current gain and excellent hFE line arity : hFE (1) = 140 to 600 (VCE = − 1 V, IC = −0.5 A) : hFE (2) = 60 (min ), 120 (typ.) (VCE = −1 V, IC = −4 A) • Low saturation voltage: VCE (sat ) = −0.5 V (max) (IC = −2 A, IB = −50 mA


Manufacture Part Number Description

Toshiba Semiconductor

A1430

2SA1430




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