TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1431
Strobe Flash Applications Medium Power Amplifier App...
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process)
2SA1431
Strobe Flash Applications Medium Power Amplifier Applications
2SA1431
Unit: mm
High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)
Low saturation voltage: VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC
ICP
IB PC Tj Tstg
−35 −20 −8 −5
−8
−0.5 1000 150 −55 to 150
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Unit V V V
A
A mW °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO IEBO V (BR) CEO V (BR) EBO
VCB = −35 V, IE = 0 VEB = −8 V, IC = 0 IC = −10 mA, IB = 0 IE = −1 mA, IC = 0
hFE (1) (Note 2)
VCE = −2 V, IC = −0.5 A
hFE (2) VCE (sat)
VCE = −2 V, IC = −4 A IC = −4 A, IB = −0.1 A
VBE VCE = −2 V, IC = −4 A fT VCE = −2 V, IC = −0.5 A Cob VCB = −10 V, IE = 0, f = 1 MHz
Note 2...