A1431

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications 2SA1431 Unit: mm High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) Low saturation voltage: VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg −35 −20 −8 −5 −8 −0.5 1000 150 −55 to 150 Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max) Unit V V V A A mW °C °C JEDEC ― JEITA ― TOSHIBA 2-7D101A Weight: 0.2 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO IEBO V (BR) CEO V (BR) EBO VCB = −35 V, IE = 0 VEB = −8 V, IC = 0 IC = −10 mA, IB = 0 IE = −1 mA, IC = 0 hFE (1) (Note 2) VCE = −2 V, IC = −0.5 A hFE (2) VCE (sat) VCE = −2 V, IC = −4 A IC = −4 A, IB = −0.1 A VBE VCE = −2 V, IC = −4 A fT VCE = −2 V, IC = −0.5 A Cob VCB = −10 V, IE = 0, f = 1 MHz Note 2...