A1437

Ordering number:EN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications · AF amplifier, various drivers, muting circuit. Features · Very small-sized package permitting sets to be made smaller and slimer. · Adoption of FBET process. · High DC current gain : (hFE=400 to 1000). · High breakdown voltage : (VCEO≥100V). · Low collector-to-emitter saturation voltage : (VCE(sat)≤0.5V). · High VEBO : (VEBO≥15V). · Small Cob : (Cob=4.0pF typ). Package Dimensions unit:mm 2003A [2SA1437] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Symbol Conditions ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCB=–80V, IE=0 VEB=–10V, IC=0 VCE=–5V, IC=–10mA VCE=–10V, IC=–10mA VCB=–10V, f=1MHz IC=–10mA, IB=–0.2mA IC=–10mA, IB=–0.2mA IC=–10µA, IE=0 IC=–1mA, RBE=∞ IE=–10µA, IC=0 JEDEC : TO-92 EIAJ : SC-43 SANYO : NP 1 : Emitter 2 : Collec...