A1436

Ordering number:EN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications · AF amplifier, various drivers, muting circuit. Features · Adoption of MBIT process. · High DC current gain (hFE=500 to 1200). · Large current capacity. · Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). · High VEBO (VEBO≥15V). Package Dimensions unit:mm 2003A [2SA1436] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCB=–40V, IE=0 VEB=–10V, IC=0 VCE=–5V, IC=–10mA VCE=–5V, IC=–100mA VCE=–10V, IC=–10mA VCB=–10V, f=1MHz IC=–100mA, IB=–2mA IC=–100mA, IB=–2mA IC=–10µA, IE=0 IC=–1mA, RBE=∞ IE=–10µA, IC=0 JEDEC : TO-92 EIAJ : SC-43 SANYO : NP 1 : Emitter 2 : Collector 3 : Base Ratings –60 –50 –15 –200 –300 600 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C Ratings ...