Ordering number:ENN1853A
PNP Epitaxial Planar Silicon Transistor
2SA1434
High hFE, Low-Frequency General-Purpose Amp Ap...
Ordering number:ENN1853A
PNP Epitaxial Planar Silicon
Transistor
2SA1434
High hFE, Low-Frequency General-Purpose Amp Applications
Applications
· Low frequency general-purpose amplifiers, drivers, muting circuits.
Features
· Ultrasmall-sized package permitting 2SA1434-used sets to be made smaller, slimer.
· Adoption of FBET process. · High DC current gain (hFE=500 to 1200). · Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V). · High VEBO (VEBO≥15V).
Package Dimensions
unit:mm 2018B
[2SA1434]
0.4 3
0.16 0 to 0.1
1.5 0.5 2.5
0.5
1 0.95 0.95 2 1.9 2.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
0.8 1.1
1 : Base 2 : Emitter 3 : Collector SANYO : CP
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature
VCBO VCEO VEBO
IC ICP PC Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage
Marking : FL
ICBO IEBO hFE
fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
VCB=–40V, IE=0 VEB=–10V, IC=0 VCE=–5V, IC=–10mA VCE=–10V, IC=–10mA VCB=–10V, f=1MHz IC=–50mA, IB=–1mA IC=–10µA, IB=–1mA I...