SiHFIB7N50A

IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 52 13 18 Single 0.52 TO-220 FULLPAK D G GDS S N-Channel MOSFET FEATURES Low Gate Charge Qg Results in Simple Drive Requirement Available Improved Gate, Avalanche and Dynamic dV/dt RoHS* Ruggedness COMPLIANT Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss Specified Compliant to RoHS directive 2002/95/EC APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) TYPICAL SMPS TOPOLOGIES Two Transistor Forward Half and Full Bridge Convertors Power Factor Correction Boost ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 FULLPAK IRFIB7N50APbF SiHFIB7N50A-E3 IRFIB7N50A SiHFIB7N50A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentf Continuous Drain Current Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Repetitive Avalanche Currenta, e Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting ...