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TPSMB6.8 Dataheets PDF



Part Number TPSMB6.8
Manufacturers Vishay
Logo Vishay
Description Transient Voltage Suppressors
Datasheet TPSMB6.8 DatasheetTPSMB6.8 Datasheet (PDF)

TPSMB6.8 thru TPSMB43A Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions DO-214AA (SMB) PRIMARY CHARACTERISTICS VBR PPPM IFSM TJ max. 6.8 V to 43 V 600 W 75 A 185 °C TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecomm.

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TPSMB6.8 thru TPSMB43A Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions DO-214AA (SMB) PRIMARY CHARACTERISTICS VBR PPPM IFSM TJ max. 6.8 V to 43 V 600 W 75 A 185 °C TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • 600 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (fig. 1) Peak pulse current with a 10/1000 µs waveform (1) (fig. 3) Peak forward surge current 8.3 ms single half sine-wave (2)(3) Instantaneous forward voltage at 50 A (3) Operating junction and storage temperature range SYMBOL PPPM IPPM IFSM VF TJ, TSTG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) land areas per figure (3) Mounted on 8.3 ms single half sine-wave duty cycle = 4 pulses per minute maximum VALUE 600 See next table 75 3.5 - 65 to + 185 UNIT W A A V °C Document Number: 88406 For technical questions within your region, please contact one of the following: Revision: 09-Feb-11 [email protected], [email protected], [email protected] www.vishay.com 1 TPSMB6.8 thru TPSMB43A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE DEVICE MARKING CODE TPSMB6.8 TPSMB6.8A TPSMB7.5 TPSMB7.5A TPSMB8.2 TPSMB8.2A TPSMB9.1 TPSMB9.1A TPSMB10 TPSMB10A TPSMB11 TPSMB11A TPSMB12 TPSMB12A TPSMB13 TPSMB13A TPSMB15 TPSMB15A TPSMB16 TPSMB16A TPSMB18 TPSMB18A TPSMB20 TPSMB20A TPSMB22 TPSMB22A TPSMB24 TPSMB24A TPSMB27 TPSMB27A TPSMB30 TPSMB30A TPSMB33 TPSMB33A TPSMB36 TPSMB36A TPSMB39 TPSMB39A TPSMB43 TPSMB43A KDP KEP KFP KGP KHP KKP KLP KMP KNP KPP KQP KRP KSP KTP KUP KVP KWP KXP KYP KZP LDP LEP LFP LGP LHP LKP LLP LMP LNP LPP LQP LRP LSP LTP LUP LVP LWP LXP LYP LZP BREAKDOWN VOLTAGE VBR (1) AT IT (V) MIN. 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 MAX. 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 TEST CURRENT IT (mA) STANDOFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (µA) 10 5.50 500 10 5.80 500 10 6.05 250 10 6.40 250 10 6.63 100 10 7.02 100 1.0 7.37 25.0 1.0 7.78 25.0 1.0 8.10 5.0 1.0 8.55 5.0 1.0 8.92 2.0 1.0 9.40 2.0 1.0 9.72 2.0 1.0 10.2 2.0 1.0 10.5 2.0 1.0 11.1 2.0 1.0 12.1 1.0 1.0 12.8 1.0 1.0 12.9 1.0 1.0 13.6 1.0 1.0 14.5 1.0 1.0 15.3 1.0 1.0 16.2 1.0 1.0 17.1 1.0 1.0 17.8 1.0 1.0 18.8 1.0 1.0 19.4 1.0 1.0 20.5 1.0 1.0 21.8 1.0 1.0 23.1 1.0 1.0 24.3 1.0 1.0 25.6 1.0 1.0 26.8 1.0 1.0 28.2 1.0 1.0 29.1 1.0 1.0 30.8 1.0 1.0 31.6 1.0 1.0 33.3 1.0 1.0 34.8 1.0 1.0 36.8 1.0 TJ = 150 °C MAXIMUM REVERSE LEAKAGE AT VWM ID (µA) 1000 1000 500 500 200 200 50.0 50.0 20.0 20.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 MAXIMUM PEAK PULSE SURGE CURRENT IPPM (2) (A) 55.6 57.1 51.3 53.1 48.0 49.6 43.5 44.8 40.0 41.4 37.0 38.5 34.7 35.9 31.6 33.0 27.3 28.3 25.5 26.7 22.6 23.8 20.6 21.7 18.8 19.6 17.3 18.1 15.3 16.0 13.8 14.5 12.6 13.1 11.5 12.0 10.6 11.1 9.70 10.1 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 Notes (1) VBR measured after IT applied for 300 µs, IT = square wave pulse or equivalent (2) Surge current waveform per fig. 3 and derated per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 www.vishay.com 2 For technical questions within your region, please.


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