9014W(BR3DG9014W)
Rev.C Feb.-2015
DATA SHEET
/ Descriptions SOT-323 NPN 。Silicon NPN transistor in a SOT-323 Plasti...
9014W(BR3DG9014W)
Rev.C Feb.-2015
DATA SHEET
/ Descriptions SOT-323
NPN 。Silicon
NPN transistor in a SOT-323 Plastic Package.
/ Features
PC ,hFE , 9015W(BR3CG9015W)。 High PC and hFE, excellent hFE linearity, complementary pair with 9015W(BR3CG9015W).
/ Applications 、。 Low frequency, low noise pre-amplifier.
/ Equivalent Circuit
/ Pinning
3
21
PIN1:Emitter
PIN 2:Base PIN 3:Collector
/ Marking
hFE Classifications Symbol hFE Range Marking
A
60~150 HJ6A
B
100~300 HJ6B
C
200~600 HJ6C
D
400~1000 HJ6D
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9014W(BR3DG9014W)
Rev.C Feb.-2015
/ Absolute Maximum Ratings(Ta=25℃)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol
VCBO VCEO VEBO
IC PC Tj Tstg
DATA SHEET
Rating
50 45 5.0 100 250 150 -55~150
Unit
V V V mA mW
℃
℃
/ Electrical Characteristics(Ta=25℃)
Parameter
Symbol
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
VCBO VCEO
IC=0.1mA IC=1.0mA
IE=0 IB=0
Emitter to Base Breakdown Voltage VEBO IE=0.1mA IC=0
Collector Cut-Off Current
ICBO VCB=50V
IE=0
Emitter Base Cut-Off Current
IEBO VEB=5.0V IC=0
DC Current Gain
hFE VCE=5.0V IC=1.0mA
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA IB=5.0mA
Base-Emitter Saturation Voltage
VBE(sat) IC=100mA IB=5.0mA
Collector-Emitter Voltage
VBE VCE=5.0V IC=2.0mA
Transi...