9014T(BR3DG9014T)
Rev.C Feb.-2015
DATA SHEET
/ Descriptions SOT-89 NPN 。Silicon NPN transistor in a SOT-89 Plastic P...
9014T(BR3DG9014T)
Rev.C Feb.-2015
DATA SHEET
/ Descriptions SOT-89
NPN 。Silicon
NPN transistor in a SOT-89 Plastic Package.
/ Features
PC ,hFE , 9015T(BR3CG9015T)。 High PC and hFE excellent hFE linearity, complementary pair with 9015T(BR3CG9015T).
/ Applications 、。 Low frequency, low noise amplifier.
/ Equivalent Circuit
/ Pinning
1 2
3
PIN1:Base
PIN 2:Collector
/ Marking hFE Classifications Symbol hFE Range
Marking
A 60~150
HJ6A
PIN 3:Emitter
B 100~300
HJ6B
C 200~600
HJ6C
D 400~1000
HJ6D
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9014T(BR3DG9014T)
Rev.C Feb.-2015
DATA SHEET
/ Absolute Maximum Ratings(Ta=25℃)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol
VCBO VCEO VEBO
IC PC Tj Tstg
/ Electrical Characteristics(Ta=25℃)
Rating
50 45 5.0 100 500 150 -55~150
Unit
V V V mA mW
℃
℃
Parameter
Symbol
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
VCBO VCEO
IC=0.1mA IC=1.0mA
IE=0 IB=0
Emitter to Base Breakdown Voltage VEBO IE=0.1mA IC=0
Collector Cut-Off Current
ICBO VCB=50V
IE=0
Emitter Base Cut-Off Current
IEBO VEB=5.0V IC=0
DC Current Gain
Collector to Emitter Saturation Voltage
Emitter to Base Saturation Voltage
hFE VCE=5.0V VCE(sat) IC=100mA VBE(sat) IC=100mA
IC=1.0mA IB=5.0mA IB=5.0mA
Emitter to Base Voltage
VBE VCE=5.0V IC=2.0m...