9014T

9014T(BR3DG9014T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN 。Silicon NPN transistor in a SOT-89 Plastic Package. / Features PC ,hFE , 9015T(BR3CG9015T)。 High PC and hFE excellent hFE linearity, complementary pair with 9015T(BR3CG9015T). / Applications 、。 Low frequency, low noise amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1：Base PIN 2：Collector / Marking hFE Classifications Symbol hFE Range Marking A 60～150 HJ6A PIN 3：Emitter B 100～300 HJ6B C 200～600 HJ6C D 400～1000 HJ6D ** ** ** ** http://www.fsbrec.com 1/6 9014T(BR3DG9014T) Rev.C Feb.-2015 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC Tj Tstg / Electrical Characteristics(Ta=25℃) Rating 50 45 5.0 100 500 150 -55～150 Unit V V V mA mW ℃ ℃ Parameter Symbol Test Conditions Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage VCBO VCEO IC=0.1mA IC=1.0mA IE=0 IB=0 Emitter to Base Breakdown Voltage VEBO IE=0.1mA IC=0 Collector Cut-Off Current ICBO VCB=50V IE=0 Emitter Base Cut-Off Current IEBO VEB=5.0V IC=0 DC Current Gain Collector to Emitter Saturation Voltage Emitter to Base Saturation Voltage hFE VCE=5.0V VCE(sat) IC=100mA VBE(sat) IC=100mA IC=1.0mA IB=5.0mA IB=5.0mA Emitter to Base Voltage VBE VCE=5.0V IC=2.0m...