L-93DP3C

PHOTOTRANSISTOR L-93DP3C Features !MECHANICALLY AND SPECTRALLY MATCHED TO THE INFRARED EMITTING LED LAMP. !WATER CLEAR LENS. Description P3 Made with NPN silicon phototransistor chips. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO: DSAC1289 APPROVED : J. Lu REV NO: V.1 CHECKED : Allen Liu DATE: DEC/06/2002 DRAWN: D.L.HUANG PAGE: 1 OF 2 Electrical \ Radiant Characteristics at TA=25°C Symbol Parameter Min. V BRCEO Collector-to-Emitter Breakdown Voltage V BRECO Emitter-to-Collector Breakdown Voltage V CE (SAT) Collector-to-Emitter Saturation Voltage I CEO Collector Dark Current TR Rise Time (10% to 90%) TF CCB λSMAX Fall Time (90% to 10%) Collector-base Capacitance Wavelength of the max sensitivity 30 5 - I (ON) On State Collector Current 0.2 Typ. 3 3 6.4 940 0.6 Max. - 0.8 100 - - Unit V V V nA us us pF nm mA Test Condiction I C=100uA, Ee=0mW/cm2 I E=100uA, Ee=0mW/cm2 I C=2mA, Ee=20mW/cm2 VCE=10V, Ee=0mW/cm2 V CE=5V, I C=1mA, R L=1000Ω F=1MHZ VCB =3V VCE=5V, Ee=1mW/cm2, λ=940nm Absolute Maximum Ratings at TA=25°C Parameter Power dissipation Operating Temperature Range Storage Temperature Range Lead Solder Temperature [1] Note: 1. 2mm below package base. Maximum Rating 100mW -40°C To +85°C -40°C To +85°C 260°C For 5 Seconds SPEC NO: DSAC1289 APPROVED : J...