SEMiX151GD066HDs

SEMiX151GD066HDs SEMiX® 13 Trench IGBT Modules SEMiX151GD066HDs Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient UL recognised file no. E63532 Typical Applications* Matrix Converter Resonant Inverter Current Source Inverter Remarks Case temperature limited to TC=125°C max. Product reliability results are valid for Tj=150°C For short circuit: Soft RGoff recommended Take care of over-voltage caused by stray inductance Absolute Maximum Ratings Symbol Conditions IGBT VCES IC ICnom ICRM VGES tpsc Tj Tj = 175 °C ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tc = 25 °C Tc = 80 °C Tj = 150 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 2.4 mA VGE = 0 V VCE = 600 V Tj = 25 °C Tj = 150 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 300 V IC = 150 A Tj = 150 °C Tj = 150 °C RG on = 4.5 Ω RG off = 4.5 Ω Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C per IGBT Values 600 200 151 150 300 -20 ... 20 6 -40 ... 175 219 161 150 300 980 -40 ... 175 600 -40 ...