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FU-318SAP-M6

Mitsubishi Electric Semiconductor

InGaAs APD MODULE FOR LONG WAVELENGTH BAND

MITSUBISHI (OPTICAL DEVICES) FU-318AP-M6/FU-318SAP-M6 InGaAs APD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION Th e FU-31...


Mitsubishi Electric Semiconductor

FU-318SAP-M6

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Description
MITSUBISHI (OPTICAL DEVICES) FU-318AP-M6/FU-318SAP-M6 InGaAs APD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION Th e FU-318AP-M6 /318SAP-M6 series avalanche photodiode(APD) modules are designed for use in fib er testing equipment and high-speed, long haul optical communication systems. Th e coaxial pakage contains an InGaAs APD coupled into either singlemode or multimode fiber pigtail. FEATURES High-responsivity (0.8A/W at 1300nm) High-speed response (fc=3GHz) APPLICATION Fiber testing equipment(OTDRs) Long haul optical communication systems ABSOLUTE MAXIMUM RATINGS (Tc=25° C) Parameter Symbol Reverse current (CW) Ir Forward current (CW) Operating case temperature Storage temperature If Tc Tstg Conditions - Rating 500 2 -40~+85 -40~+85 Unit mA mA °C °C MITSUBISHI (OPTICAL DEVICES) FU-318AP-M6/FU-318SAP-M6 InGaAs APD MODULE FOR LONG WAVELENGTH BAND ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=-25° C,l=1.3mm unless otherwise noted) Parameter Symbol Test Conditions Limits Min. Typ. Detection range 1000 Responsivity(Note 1) R M=1(Note 2) 0.75 0.8 0.85 0.9 l=1.55mm,M=1(Note 2) Breakdown voltage Vbr 50 Id=100mA Temp.coefficient of Vbr(note 4) Dark current b Id Id=100mA,Tc=-40~85° C Vr=0.9Vbr,Tc=25 ° C 0.1 30 1 0.17 5 3 0.6 Unit Max. 1600 100 0.25 60 700 1000 1 GHz pF nm A/W V %/ ° C nA Vr=0.9Vbr,Tc=70 ° C Vr=0.9Vbr,Tc=85 ° C Excess noise factor F M=10(Note 2) Minmum multiplication Mmin Ipo=1mA,Vr=V(@Id=1 mA) (Note 3) Cut-off frequency (-3dB) fc M=10,Rl=50W(Note 2) Capacitance Ct M=...




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