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FU-319SPA-C6

Mitsubishi Electric Semiconductor

InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE

MITSUBISHI (OPTICAL DEVICES) FU-319SPA-C6 InGaAs APD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIP...


Mitsubishi Electric Semiconductor

FU-319SPA-C6

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Description
MITSUBISHI (OPTICAL DEVICES) FU-319SPA-C6 InGaAs APD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPP-C6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication systems. The coaxial package contains InGaAs avalanche photodiode coupled with single-mode fiber pigtail and GaAs preamplifier. FEATURES High-sensitivity (-33dBm typ) 5pin coaxial package Selectable single power supply voltage (+5V or 5.2V). (InGaAs avalanche photodiode and GaAs preamplifier are isolated from the case.) GaAs preamplifier with AGC function Differential output (50Ω ) APPLICATION 2.5Gbps.optical receiver (OC-48, STM-16) Extended reach datacom and telecom applications Long haul optical communication systems ABSOLUTE MAXIMUM RATINGS (Tc=25° C) Parameter Symbol Conditions Rating APD Reverse voltage VPD VSS=0V 0~Vbr APD Reverse current (CW) Ir 500 APD Forward current (CW) If 2 Power supply voltage VDD VSS=0V 0~7 Operating case temperature Tc -40~+85 Storage temperature Tstg -40~+85 Vbr: APD breakdown voltage. (Vbr value is specified on the data sheet.) Unit V µA mA V ° C ° C MITSUBISHI (OPTICAL DEVICES) FU-319SPA-C6 InGaAs APD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25° C,λ =1.55µm,VDD=5V,VSS=0V unless otherwise noted) Parameter Symbol Test Conditions Limits Unit Min. Typ. Max. Detection range 1000 1600 nm Responsivity(Note 1) R13 0.70 ...




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