N-channel enhancement mode MOSFET
This product complies with the RoHS Directive (EU 2002/95/EC).
Power MOSFETs
2SK3652
N-channel enhancement mode MOSFET
...
Description
This product complies with the RoHS Directive (EU 2002/95/EC).
Power MOSFETs
2SK3652
N-channel enhancement mode MOSFET
3.3±0.3Product lifecyclennuaen
■ Features Low on-resistance, low Qg High avalanche resistance
■ Applications For PDP For high-speed switching
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability *
VDSS VGSS
ID IDP EAS
230 ±30 50 200 2 200
V V A A mJ
Power dissipation
Junction temperature Storage temperature
Ta = 25°C
PD
Tj Tstg
100 3
150 −55 to +150
W
°C °C
Note) *: L = 1 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25°C
18.6±0.5stage.dc (2.0) Solder Dip
26.5±0.5e/
(2.0) (1.2) (10.0) (4.5) (23.4)
22.0±0.5
15.5±0.5 φ 3.2±0.1
Unit: mm 3.0±0.3 5˚
5˚
(4.0) 2.0±0.2
5˚
5˚ 5˚
1.1±0.1
0.7±0.1
5.45±0.3 10.9±0.5
5.5±0.3
5˚ 12 3
(2.0)
1: Gate 2: Drain 3: Source TOP-3E-A1 Package
Marking Symbol: K3652
Internal Connection
D
G
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■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Drain-source surrender voltage
VDSS
Gate threshold voltage
Vth
Drain-source cutoff current
IDSS
Gate-source cutoff current
IGSS
Drain-source ON resistance
RDS(on)
Forward trans...
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