APM4435

APM4435 P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V Super High Density Cell Design Reliable and Rugged SO-8 Package Applications S1 S2 S3 G4 8D 7D 6D 5D SO − 8 S SS Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G Ordering and Marking Information DD DD P-Channel MOSFET APM 4435 APM 4435 H a n d lin g C o d e Temp. Range Package Code APM 4435 XXXXX Package Code K : SO -8 O peration Junction Tem p. R ange C : -55 to 125°C H andling C ode TU : Tube TR : Tape & Reel XXX XX - D ate Code Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol VDSS VGSS ID IDM Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed TA = 25°C Rating -30 ±25 -8 -50 Unit V A ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Dec., 2001 1 www.anpec.com.tw APM4435 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol PD TJ TSTG RθJA Parameter Maximum Power Dissipation Maximum Junction Temperature TA = 25°C Storage Temperature Range Thermal Resistance - Junction to Ambient Rating 2 150 -55 to 150 80 Unit W °C °C/W Electrical Characteristics (TA=25...