2MBI150U4B-120

SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI150U4B-120 Spec. No. : MS5F 6059 Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada Y.Seki MS5F6059 1 13 H04-004-07b Revised Records Date Classification Ind. Mar.-09 -’05 Enactment Content Applied date Drawn Checked Checked Approved Issued date T.Miyasaka K.Yamada Y.Seki MS5F6059 2 13 H04-004-06b 1. Outline Drawing ( Unit : mm ) 2MBI150U4B-120 2. Equivalent circuit MS5F6059 3 13 H04-004-03a 3. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified ) It em s Symbols Conditions Collector-Emitter voltage Gate-Emitter voltage VCES VGES Ic Continuous Collector current Icp 1ms -Ic -Ic pulse 1ms Collector Power Dissipation Pc 1 device Junction temperature Tj Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso AC : 1min. Screw Mounting (*2) Torque Terminals (*2) - (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : 2.5 to 3.5 Nm (M5) Tc=25oC Tc=80oC Tc=25oC Tc=80oC Max i m u m Ratings 1200 ±20 200 150 400 300 150 300 780 +150 -40 to +125 Units V V A W oC 2500 VAC 3.5 N m 4. Electrical characteristics ( at Tj= 25oC unless otherwise specified ) It em s Sym b o l s Conditions Characteristics min. typ. max. Zero gate voltage collector current ICES VCE=1200V VGE=0V - - 2.0 Gate-Emitter leakage current IGES VCE=0V VGE=±20V - - 400 Gate-Emitter threshold volta...