BC846BDW1T1G

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit Collector −Emitter Voltage VCEO 65 45 30 V Collector −Base Voltage VCBO 80 50 30 V Emitter −Base Voltage VEBO 6.0 6.0 5.0 V Collector Current − Continuous IC 100 100 100 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate Above 25°C PD 380 mW 250 mW/°C 3.0 mW/°C Thermal Resistance, Junction to Ambient RqJA °C/W 328 Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C 1. FR−5 = 1.0 x 0.75 x 0.062 in *For additional information on our Pb−Free strategy and soldering details, please down...