BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G
Dual General Purpose Tra...
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G
Dual General Purpose
Transistors
NPN Duals
These
transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.
Features
S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol BC846 BC847 BC848 Unit
Collector −Emitter Voltage
VCEO
65
45
30
V
Collector −Base Voltage
VCBO
80
50
30
V
Emitter −Base Voltage
VEBO
6.0
6.0
5.0
V
Collector Current − Continuous
IC 100 100 100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate Above 25°C
PD
380 mW 250 mW/°C 3.0 mW/°C
Thermal Resistance, Junction to Ambient
RqJA
°C/W 328
Junction and Storage Temperature Range
TJ, Tstg − 55 to +150
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in *For additional information on our Pb−Free strategy and soldering details, please
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