Document
http://www.fujielectric.com/products/semiconductor/
7MBR100VB060-50
IGBT Modules
IGBT MODULE (V series) 600V / 100A / PIM
Features
Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product
Applications
Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Symbols
Conditions
Inverter
Collector-Emitter voltage Gate-Emitter voltage
Collector current
Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage
Collector current
Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive)
VCES VGES IC Icp -IC -Ic pulse PC VCES VGES IC ICP PC VRRM VRRM IO IFSM I2t
Brake
Converter
Junction temperature
Tj
Operating junciton temperature (under switching conditions)
Tjop
Case temperature Storage temperature
TC Tstg
Isolation voltage
between terminal and copper base (*1) between thermistor and others (*2)
Viso
Screw torque Mounting (*3)
-
Continuous 1ms
1ms 1 device
TC=80°C TC=80°C
Continuous 1ms 1 device
TC=80°C TC=80°C
50Hz/60Hz, sine wave
10ms, Tj=150°C half sine wave
Inverter, Brake Converter Inverter, Brake Converter
AC : 1min. M5
Maximum ratings 600 ±20 100 200 100 200 335 600 ±20 50 100 215 600 800 100 700 2450 175 150 150 150 125 -40~+125
2500
3.5
Units V V
A
W V V A W V V A A A2s
°C
VAC Nm
Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1
7MBR100VB060-50
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols Conditions
Inverter
Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance Turn-on time Turn-off time
Forward on voltage
Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value
ICES IGES VGE (th)
VCE (sat) (terminal)
VCE (sat) (chip)
Cies ton tr tr (i) toff tf
VF (terminal)
VF (chip)
trr
ICES
IGES
VCE (sat) (terminal)
VCE (sat) (chip)
ton tr toff tf IRRM VFM (chip) IRRM
R
B
VGE = 0V, VCE = 600V
VGE = 0V, VGE = ±20V
VCE = 20V, IC = 100mA
VGE = 15V IC = 100A
Tj=25°C Tj=125°C Tj=150°C
VGE = 15V IC = 100A
Tj=25°C Tj=125°C Tj=150°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 300V IC = 100A VGE = +15 / -15V RG = 13Ω
IF = 100A
IF = 100A
IF = 100A VGE = 0V VCE = 600V VCE = 0V VGE = +20 / -20V
VGE = 15V IC = 50A
VGE = 15V IC = 50A
VCE = 300V IC = 50A VGE = +15 / -15V RG = 43Ω VR = 600V
IF = 100A
VR = 800V T = 25°C T = 100°C T = 25 / 50°C
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
terminal chip
Brake
Thermistor Converter
Characteristics min. typ. max.
- - 1.0 - - 200 6.2 6.7 7.2 - 2.20 2.65 - 2.50 - 2.60 - 1.60 2.05 - 1.90 - 2.00 - 6.4 - 0.36 1.20 - 0.25 0.60 - 0.07 - 0.52 1.20 - 0.03 0.45 - 2.20 2.65 - 2.10 - 2.10 - 1.60 2.05 - 1.50 - 1.47 - - 0.35
- - 1.0
Units mA nA V
V
nF µs
V
µs mA
-
465 3305
-
1.90 2.20 2.30 1.60 1.90 2.00 0.36 0.25 0.52 0.03
1.85 1.25
5000 495 3375
200
2.35 -
2.05 -
1.20 0.60 1.20 0.45 1.00 2.30
1.0
520 3450
nA
V
µs mA V mA Ω K
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device) Contact thermal resistance (1device) (*4)
Rth(j-c) Rth(c-f)
Inverter IGBT Inverter FWD Brake IGBT Converter Diode with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics min. typ. max.
- - 0.45 - - 0.80 - - 0.71 - - 0.66 - 0.05 -
Units °C/W
2
7MBR100VB060-50
Characteristics (Representative)
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
200
VGE=20V
15V 12V
150
Collector current: IC [A]
100 10V
50
0 0
8V
1234 Collector-Emitter voltage: VCE[V]
5
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
200
Tj=25°C
Tj=150°C
150 Tj=125°C
Collector current: IC [A]
100
50
0 012345
Collector-Emitter voltage: VCE [V]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
100.0
10.0
Cies
1.0 Cres Coes
0.1
Capacitance: Cies, Coes, resC [nF]
0.0 0
10 20 Collector - Emitter voltage: VCE [V]
30
3
Collector - Emitter voltage: CEV [200V/div] Gate - Emitter voltage: GEV [5V/div]
Collector current: IC [A]
Collector - Emitter voltage: CEV [V]
IGBT Modules http://www.fujielect.