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7MBR100VB060-50 Dataheets PDF



Part Number 7MBR100VB060-50
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 7MBR100VB060-50 Datasheet7MBR100VB060-50 Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ 7MBR100VB060-50 IGBT Modules IGBT MODULE (V series) 600V / 100A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Symbols Conditions Inverter Coll.

  7MBR100VB060-50   7MBR100VB060-50


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http://www.fujielectric.com/products/semiconductor/ 7MBR100VB060-50 IGBT Modules IGBT MODULE (V series) 600V / 100A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Symbols Conditions Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) VCES VGES IC Icp -IC -Ic pulse PC VCES VGES IC ICP PC VRRM VRRM IO IFSM I2t Brake Converter Junction temperature Tj Operating junciton temperature (under switching conditions) Tjop Case temperature Storage temperature TC Tstg Isolation voltage between terminal and copper base (*1) between thermistor and others (*2) Viso Screw torque Mounting (*3) - Continuous 1ms 1ms 1 device TC=80°C TC=80°C Continuous 1ms 1 device TC=80°C TC=80°C 50Hz/60Hz, sine wave 10ms, Tj=150°C half sine wave Inverter, Brake Converter Inverter, Brake Converter AC : 1min. M5 Maximum ratings 600 ±20 100 200 100 200 335 600 ±20 50 100 215 600 800 100 700 2450 175 150 150 150 125 -40~+125 2500 3.5 Units V V A W V V A W V V A A A2s °C VAC Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 7MBR100VB060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Inverter Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value ICES IGES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE (sat) (terminal) VCE (sat) (chip) ton tr toff tf IRRM VFM (chip) IRRM R B VGE = 0V, VCE = 600V VGE = 0V, VGE = ±20V VCE = 20V, IC = 100mA VGE = 15V IC = 100A Tj=25°C Tj=125°C Tj=150°C VGE = 15V IC = 100A Tj=25°C Tj=125°C Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VCC = 300V IC = 100A VGE = +15 / -15V RG = 13Ω IF = 100A IF = 100A IF = 100A VGE = 0V VCE = 600V VCE = 0V VGE = +20 / -20V VGE = 15V IC = 50A VGE = 15V IC = 50A VCE = 300V IC = 50A VGE = +15 / -15V RG = 43Ω VR = 600V IF = 100A VR = 800V T = 25°C T = 100°C T = 25 / 50°C Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C terminal chip Brake Thermistor Converter Characteristics min. typ. max. - - 1.0 - - 200 6.2 6.7 7.2 - 2.20 2.65 - 2.50 - 2.60 - 1.60 2.05 - 1.90 - 2.00 - 6.4 - 0.36 1.20 - 0.25 0.60 - 0.07 - 0.52 1.20 - 0.03 0.45 - 2.20 2.65 - 2.10 - 2.10 - 1.60 2.05 - 1.50 - 1.47 - - 0.35 - - 1.0 Units mA nA V V nF µs V µs mA - 465 3305 - 1.90 2.20 2.30 1.60 1.90 2.00 0.36 0.25 0.52 0.03 1.85 1.25 5000 495 3375 200 2.35 - 2.05 - 1.20 0.60 1.20 0.45 1.00 2.30 1.0 520 3450 nA V µs mA V mA Ω K Thermal resistance characteristics Items Symbols Conditions Thermal resistance (1device) Contact thermal resistance (1device) (*4) Rth(j-c) Rth(c-f) Inverter IGBT Inverter FWD Brake IGBT Converter Diode with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. Characteristics min. typ. max. - - 0.45 - - 0.80 - - 0.71 - - 0.66 - 0.05 - Units °C/W 2 7MBR100VB060-50 Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 200 VGE=20V 15V 12V 150 Collector current: IC [A] 100 10V 50 0 0 8V 1234 Collector-Emitter voltage: VCE[V] 5 [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 200 Tj=25°C Tj=150°C 150 Tj=125°C Collector current: IC [A] 100 50 0 012345 Collector-Emitter voltage: VCE [V] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 100.0 10.0 Cies 1.0 Cres Coes 0.1 Capacitance: Cies, Coes, resC [nF] 0.0 0 10 20 Collector - Emitter voltage: VCE [V] 30 3 Collector - Emitter voltage: CEV [200V/div] Gate - Emitter voltage: GEV [5V/div] Collector current: IC [A] Collector - Emitter voltage: CEV [V] IGBT Modules http://www.fujielect.


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