Document
http://www.fujielectric.com/products/semiconductor/
7MBP50VDA060-50
IGBT Modules
IGBT MODULE (V series) 600V / 50A / IPM
Features
• Temperature protection provided by directly detecting the junction temperature of the IGBTs
• Low power loss and soft switching • High performance and high reliability IGBT with overheating
protection • Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics Absolute Maximum Ratings (TC=25ºC, VCC=15V unless otherwise specified)
Items
Symbol
Min.
Collector-Emitter Voltage (*1)
VCES
0
Short Circuit Voltage
VSC 200
DC IC
-
Inverter
Collector Current
1ms
Icp
-
Duty=100% (*2) -IC
-
Collector Power Dissipation 1 device (*3)
PC
-
Brake
Collector Current
DC 1ms
IC Icp
-
Forward Current of Diode
IF
-
Collector Power Dissipation 1 device (*3)
PC
-
Supply Voltage of Pre-Driver (*4)
VCC
-0.5
Input Signal Voltage (*5)
Vin -0.5
Alarm Signal Voltage (*6)
VALM
-0.5
Alarm Signal Current (*7) IALM -
Junction Temperature
Tj -
Operating Case Temperature
Topr
-20
Storage Temperature
Tstg -40
Solder Temperature (*8)
Tsol -
Isolating Voltage (*9)
Viso -
Screw Torque
Terminal (M4) Mounting (M4)
-
-
Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W, B)-N. Note *2: Duty=125ºC/Rth(j-c)D /(IF×VF Max.)×100 Note *3: PC=125ºC/Rth(j-c)Q (Inverter & Brake) Note *4: VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13. Note *5: Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15~18 and 13. Note *6: VALM shall be applied to the voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 19 and 13. Note *7: IALM shall be applied to the input current to terminal No.2,6,10 and 19. Note *8: Immersion time 10±1sec. 1time. Note *9: Terminal to base, 50/60Hz sine wave 1min. All terminals should be connected together during the test.
Max.
600 400 50 100 50 201 30 60 30 126 20 VCC+0.5 VCC 20 150 110 125 260 AC2500
1.7
Units
V V A A A W A A A W V V V mA ºC ºC ºC ºC Vrms
Nm
1
7MBP50VDA060-50
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Inverter
Brake
Electrical Characteristics (Tj=25ºC, VCC=15V unless otherwise specified)
Items Collector Current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector Current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD
Switching time
Symbol ICES VCE(sat)
VF ICES VCE(sat)
VF ton toff trr
Conditions VCE=600V IC=50A
IF=50A VCE=600V IC=30A
IC=30A
Terminal Chip Terminal Chip
Terminal Chip Terminal Chip
VDC=300V, Tj=125ºC, IC=50A
VDC=300V, IC=50A
Supply current of P-side pre-driver (per one unit)
Iccp
Supply current of N-side pre-driver
Iccn
Input signal threshold voltage
Vinth(on) Vinth(off)
Over Current Protection Level
Inverter Brake
IOC
Over Current Protection Delay time
tdOC
Short Circuit Protection Delay time
tSC
IGBT Chips Over Heating Protection Temperature Level TjOH
Over Heating Protection Hysteresis
TjH
Under Voltage Protection Level
VUV
Under Voltage Protection Hysteresis
VH
tALM(OC)
Alarm Signal Hold Time
tALM(UV)
tALM(TjOH)
Resistance for current limit
RALM
Switching Frequency= 0-15kHz TC=-20~110ºC
Vin-GND
ON OFF
Tj=125ºC
Tj=125ºC Tj=125ºC Surface of IGBT Chips
ALM-GND TC=-20~110ºC
VCC
10V
Min.
1.1 -
-
1.2 1.5 75 45 150 11.0 0.2 1.0 2.5 5.0 960
Typ.
1.40 1.80 1.40 1.80 -
-
1.4 1.7 5 2 20 0.5 2.0 4.0 8.0 1265
Max.
1.0 1.95
2.35
1.0 1.85
2.20
2.1
0.3
12 46 1.6 1.9 3 12.5 2.4 4.9 11.0 1570
Units
mA V V V V mA V V V V µs µs
µs
mA mA V V A A µs µs ºC ºC V V ms ms ms Ω
Thermal Characteristics (TC = 25ºC)
Items
Junction to Case Thermal Resistance (*10)
Inverter Brake
IGBT FWD IGBT FWD
Case to Fin Thermal Resistance with Compound
Note *10: For 1device, the measurement point of the case is just under the chip.
Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)Q Rth(j-c)D Rth(c-f)
Noise Immunity (VDC=300V, VCC=15V)
Items
Conditions
Common mode rectangular noise
Pulse width 1μs, polarity ±, 10 min. Judge : no over-current, no miss operating
Min. -
Min. ±2.0
Typ. -
0.05
Typ. -
Max. 0.62 0.98 0.99 1.35
-
Max. -
Units °C/W °C/W °C/W °C/W °C/W
Units kV
Recommended Operating Conditions
Items DC Bus Voltage Power Supply Voltage of Pre-Driver
Symbol VDC VCC
Switching frequency of IPM
fSW
Arm shoot through blocking time for IPM's input signal tdead
Screw Torque (M4)
-
Min.
Typ.
Max.
Units
- - 400 V
13.5 15.0 16.5
V
- - 20 kHz
1.0 -
- µs
1.3 - 1.7 Nm
2
7MBP50VDA060-50
Block Diagram
VccU ④ VinU ③ ALMU ②
GNDU ① VccV ⑧ VinV ⑦ ALM V ⑥
GNDV ⑤ VccW ⑫ VinW ⑪ ALM W ⑩
GNDW ⑨ Vcc ⑭
VinX ⑯
RALM RALM RALM
GND ⑬
VinY ⑰
VinZ ⑱
VinDB ⑮
ALM ⑲
RALM
Pre-Driver Pre-Driver Pre-Driver Pre-Driver
IGBT Modules http://www.fujielectric.com/products/semiconductor/
P U
V
W
Pre-Driver
Pre-Driver P.