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1MBI200HH-120L-50 Dataheets PDF



Part Number 1MBI200HH-120L-50
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 1MBI200HH-120L-50 Datasheet1MBI200HH-120L-50 Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ 1MBI200HH-120L-50 IGBT MODULE 1200V / 200A / 1 in one package IGBT Modules Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES IC Col.

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http://www.fujielectric.com/products/semiconductor/ 1MBI200HH-120L-50 IGBT MODULE 1200V / 200A / 1 in one package IGBT Modules Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES IC Collector current Icp -IC -IC pluse Collector Power Dissipation PC Reverse voltage for FWD VR Forword current for FWD IF IF pulse Junction temperature Tj Storage temperature Tstg Isolation voltage between terminal and copper base (*1) between thermistor and others (*2) Viso Screw Torque Mounting (*3) Terminals (*4) - Conditions Continuous 1ms TC=25°C TC=80°C TC=25°C TC=80°C 1ms 1 device Continuous 1ms AC : 1min. Note *1: All terminals should be connected together when isolation test will be done. Note *2: Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. Note *3: Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6) Note *4: Recommendable Value : Terminals 3.5 to 4.5 Nm (M6) Maximum ratings 1200 ±20 300 200 600 400 75 150 1390 1200 200 400 +150 -40 to +125 2500 3.5 4.5 Units V V A W V A °C VAC Nm 1 1MBI200HH-120L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Zero gate voltage collector current ICES Gate-Emitter leakage current IGES Thermistor FWD IGBT+Inverse Diode Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse Current Forward on voltage Reverse recovery time Lead resistance, terminal-chip (*5) Resistance B value Note *5: Biggest internal terminal resistance among arm. Thermal resistance characteristics VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) IR VF (terminal) VF (chip) trr R lead R B VCE = 1200V VGE = 0V VCE = 0V VGE=±20V VCE = 20V IC = 200mA Tj= 25°C IC = 200A VGE=15V Tj=125°C Tj= 25°C Tj=125°C VCE=10V,VGE=0V,f=1MHz VCC = 600V IC = 200A VGE = ±15V RG = 3.1 Ω LS = 20nH IF = 75A VGE=0V VCE = 1200V IF = 200A VGE=0V IF = 200A Tj= 25°C Tj=125°C Tj= 25°C Tj=125°C Tj= 25°C Tj=125°C Tj= 25°C Tj=125°C T = 25°C T = 125°C T = 25/50°C Items Symbols Conditions Thermal resistance(1device) Contact Thermal resistance Rth(j-c) Rth(c-f) IGBT Inverse Diode FWD with Thermal Compound (*6) Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound. Characteristics min. typ. max. - - 2.0 Units mA - - 400 nA 5.7 465 3305 6.2 3.25 4.15 3.10 4.00 18 0.20 0.10 0.30 0.30 0.05 1.80 1.95 1.70 1.85 8.15 4.45 7.90 4.20 0.70 5000 495 3375 6.7 3.55 - 3.40 - 0.50 0.40 0.70 0.20 2.30 2.15 1.0 9.40 9.15 0.20 520 3450 V V nF μs V mA V μs mΩ Ω K Characteristics min. typ. max. - - 0.067 - - 0.460 - - 0.150 - 0.0250 - Units °C/W 2 1MBI200HH-120L-50 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C / chip 500 400 15V 12V VGE=20V 10V 300 Collector current : IC [ A ] 200 8V 100 0 012345678 Collector-Emitter voltage : VCE [ V ] Collector current : IC [ A ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 500 400 Tj=25°C Tj=125°C 300 200 100 0 01234567 Collector-Emitter voltage : VCE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f=1MHz, Tj=25°C 100.0 10.0 Cies Capacitance : Cies, Coes, resC [ nF ] Coes 1.0 Cres 0.1 0 10 20 Collector-Emitter voltage : VCE [ V ] 30 3 Collector- Emitter voltage : VCE[ 200V/div ] Gate-Emitter voltage : GEV [ 5V/div ] Collector current : IC [A ] Collector-Emitter voltage : CEV [ V ] IGBT Modules http://www.fujielectric.com/products/semiconductor/ Collector current vs. Collector-Emitter voltage (typ.) Tj=125°C / chip 500 15V 12V 400 VGE=20V 10V 300 200 8V 100 0 012345678 Collector-Emitter voltage : VCE [ V ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 10 8 6 4 IC=400A IC=200A 2 IC=100A 0 5 10 15 20 25 Gate-Emitter voltage : VGE [ V ] Dynamic Gate charge (typ.) VCC=600V, IC=200A, Tj=25oC VCE VGE 0 200 400 Gate charge : Qg [ nC ] 600 1MBI200HH-120L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 1000 Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=3.1Ω, Tj=25oC 1000 Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=3.1Ω, Tj=125oC Switching time : ton, tr, toff, tf [ nsec ] 100 toff ton tr 10 0 tf 100 200 Collector current : IC [ A ] 300 10000.


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