Document
http://www.fujielectric.com/products/semiconductor/
1MBI200HH-120L-50
IGBT MODULE 1200V / 200A / 1 in one package
IGBT Modules
Features
High speed switching Voltage drive Low Inductance module structure
Applications
Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items Collector-Emitter voltage Gate-Emitter voltage
Symbols VCES VGES
IC
Collector current
Icp
-IC
-IC pluse
Collector Power Dissipation
PC
Reverse voltage for FWD
VR
Forword current for FWD
IF IF pulse
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1) between thermistor and others (*2)
Viso
Screw Torque
Mounting (*3) Terminals (*4)
-
Conditions
Continuous 1ms
TC=25°C TC=80°C TC=25°C TC=80°C
1ms 1 device
Continuous 1ms
AC : 1min.
Note *1: All terminals should be connected together when isolation test will be done. Note *2: Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. Note *3: Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6) Note *4: Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)
Maximum ratings 1200 ±20 300 200 600 400 75 150 1390 1200 200 400 +150
-40 to +125
2500
3.5 4.5
Units V V
A
W V A °C VAC Nm
1
1MBI200HH-120L-50
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols
Conditions
Zero gate voltage collector current
ICES
Gate-Emitter leakage current
IGES
Thermistor
FWD
IGBT+Inverse Diode
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance Turn-on time
Turn-off time
Forward on voltage
Reverse Current
Forward on voltage
Reverse recovery time Lead resistance, terminal-chip (*5)
Resistance B value Note *5: Biggest internal terminal resistance among arm. Thermal resistance characteristics
VGE(th)
VCE(sat) (terminal)
VCE(sat) (chip) Cies ton tr tr (i) toff tf VF (terminal)
VF (chip) IR VF (terminal)
VF (chip) trr R lead
R
B
VCE = 1200V VGE = 0V
VCE = 0V VGE=±20V
VCE = 20V IC = 200mA
Tj= 25°C
IC = 200A VGE=15V
Tj=125°C Tj= 25°C
Tj=125°C
VCE=10V,VGE=0V,f=1MHz
VCC = 600V IC = 200A VGE = ±15V RG = 3.1 Ω LS = 20nH
IF = 75A VGE=0V
VCE = 1200V
IF = 200A VGE=0V
IF = 200A
Tj= 25°C Tj=125°C Tj= 25°C Tj=125°C
Tj= 25°C Tj=125°C Tj= 25°C Tj=125°C
T = 25°C T = 125°C T = 25/50°C
Items
Symbols Conditions
Thermal resistance(1device) Contact Thermal resistance
Rth(j-c) Rth(c-f)
IGBT Inverse Diode FWD with Thermal Compound (*6)
Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics min. typ. max.
- - 2.0
Units mA
- - 400 nA
5.7
465 3305
6.2
3.25 4.15 3.10 4.00 18 0.20 0.10 0.30 0.30 0.05 1.80 1.95 1.70 1.85
8.15 4.45 7.90 4.20
0.70 5000 495 3375
6.7
3.55 -
3.40 -
0.50 0.40
0.70 0.20 2.30
2.15
1.0 9.40
9.15
0.20
520 3450
V
V nF
μs
V mA V μs mΩ Ω K
Characteristics min. typ. max.
- - 0.067 - - 0.460 - - 0.150 - 0.0250 -
Units °C/W
2
1MBI200HH-120L-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C / chip
500
400
15V 12V
VGE=20V
10V
300
Collector current : IC [ A ]
200
8V 100
0
012345678 Collector-Emitter voltage : VCE [ V ]
Collector current : IC [ A ]
Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
500
400 Tj=25°C Tj=125°C
300
200
100
0 01234567 Collector-Emitter voltage : VCE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f=1MHz, Tj=25°C
100.0
10.0
Cies
Capacitance : Cies, Coes, resC [ nF ]
Coes 1.0
Cres
0.1 0
10 20 Collector-Emitter voltage : VCE [ V ]
30 3
Collector- Emitter voltage : VCE[ 200V/div ] Gate-Emitter voltage : GEV [ 5V/div ]
Collector current : IC [A ]
Collector-Emitter voltage : CEV [ V ]
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.) Tj=125°C / chip
500
15V 12V
400
VGE=20V
10V
300
200 8V
100
0
012345678 Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip
10
8
6
4 IC=400A IC=200A
2 IC=100A
0 5 10 15 20 25 Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.) VCC=600V, IC=200A, Tj=25oC
VCE
VGE
0 200 400 Gate charge : Qg [ nC ]
600
1MBI200HH-120L-50
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
1000
Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=3.1Ω, Tj=25oC
1000
Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=3.1Ω, Tj=125oC
Switching time : ton, tr, toff, tf [ nsec ]
100
toff ton tr
10 0
tf
100 200 Collector current : IC [ A ]
300
10000.