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1MBI200U4H-120L-50 Dataheets PDF



Part Number 1MBI200U4H-120L-50
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 1MBI200U4H-120L-50 Datasheet1MBI200U4H-120L-50 Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ 1MBI200U4H-120L-50 IGBT MODULE (U series) 1200V / 200A / 1 in one package IGBT Modules Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES .

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http://www.fujielectric.com/products/semiconductor/ 1MBI200U4H-120L-50 IGBT MODULE (U series) 1200V / 200A / 1 in one package IGBT Modules Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Conditions Ic Continuous Collector current Ic pulse -Ic -Ic pulse Collector power dissipation Pc Reverse voltage for FWD VR Forword current for FWD IF IF pulse Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso Screw torque Mounting (*2) Terminals (*3) - Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable Value : 2.5 to 3.5 Nm (M5 or M6) Note *3: Recommendable Value : 2.5 to 3.5 Nm (M5) 1ms 1ms 1 device Continuous 1ms AC : 1min. Tc=25°C Tc=80°C Tc=25°C Tc=80°C Maximum ratings 1200 ±20 300 200 600 400 100 200 1040 1200 300 600 +150 -40~+125 2500 3.5 4.5 Units V V A W V A °C °C VAC Nm 1 1MBI200U4H-120L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse Current Forward on voltage Reverse recovery time Lead resistance, terminal-chip(*4) Note *4: Biggest internal terminal resistance among arm. Thermal resistance characteristics Symbols ICES IGES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) IR VF (terminal) VF (chip) trr R lead Conditions VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 200mA Tj=25°C VGE = 15V IC = 200A Tj=125°C Tj=25°C Tj=125°C VGE = 0V, VCE = 10V, f = 1MHz VCC = 600V, IC = 200A VGE = ±15V, RG = 3Ω VGE = 0V IF = 100A VCE = 1200V VGE = 0V IF =300A IF = 300A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Items Symbols Conditions IGBT Thermal resistance (1device) Rth(j-c) Inverse Diode FWD Contact thermal resistance Rth(c-f) with Thermal Compound (*5) Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound. Characteristics min. typ. max. - - 2.0 - - 400 4.5 6.5 8.5 - 2.10 2.25 - 2.30 - 1.90 2.05 - 2.10 - 22 - 0.32 1.20 - 0.10 0.60 - 0.03 - 0.41 1.00 - 0.07 0.30 - 1.75 1.90 - 1.85 - 1.60 1.75 - 1.75 - - 3.0 - 1.85 2.00 - 2.00 - 1.60 1.75 - 1.75 - - 0.35 - 1.00 - Units mA nA V V nF µs V mA V µs mΩ Characteristics min. typ. max. - - 0.12 - - 0.40 - - 0.13 - 0.025 - Units °C/W 2 1MBI200U4H-120L-50 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25oC / chip 200 150 VGE=20V 15V 12V Collector current : Ic [ A ] Collector current : Ic [ A ] 100 50 0 0 10V 1234 Collector-Emitter voltage : VCE [ V ] 8V 5 Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 500 400 Tj=25oC Tj=125oC 300 200 100 0 01234 Collector-Emitter voltage : VCE [ V ] 5 Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f=1MHz, Tj=25oC 100.0 Cies 10.0 Cres 1.0 Coes Capacitance : Cies, Coes, Cres [ nF ] 0.1 0 10 20 Collector-Emitter voltage : VCE [ V ] 30 3 Collector- Emitter voltage : VCE [ 200V/div ] Gate-Emitter voltage : VGE [ 5V/div ] Collector-Emitter voltage : VCE [ V ] Collector current : Ic [A ] IGBT Modules http://www.fujielectric.com/products/semiconductor/ Collector current vs. Collector-Emitter voltage (typ.) Tj=125oC / chip 200 150 VGE=20V 15V 12V 100 50 0 0 10V 8V 1234 Collector-Emitter voltage : VCE [ V ] 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25oC / chip 10 8 6 4 Ic=200A 2 Ic=100A Ic=50A 0 5 10 15 20 25 Gate-Emitter voltage : VGE [ V ] Dynamic Gate charge (typ.) Vcc=600V, Ic=200A, Tj=25oC VCE VGE 0 0 200 400 600 800 1000 Gate charge : Qg [ nC ] 1MBI200U4H-120L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=3Ω, Tj=25oC 10000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=3Ω, Tj=125oC Switching time : ton, tr, toff, tf [ nsec ] 1000 100 toff ton tr tf 1000 100 ton toff tr tf 10 0 100 200 300 Collector current : Ic [ A ] 400 10000 Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj=25oC 1000 ton toff tr 100 tf 10 1 10 100 Gate resistance : RG [Ω] 1000 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj=125oC 50 40 Eon 30 Eoff 20 10 Err 0 1 10 100 1.


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