Document
http://www.fujielectric.com/products/semiconductor/
1MBI200U4H-120L-50
IGBT MODULE (U series) 1200V / 200A / 1 in one package
IGBT Modules
Features
High speed switching Voltage drive Low Inductance module structure
Applications
Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items Collector-Emitter voltage Gate-Emitter voltage
Symbols VCES VGES
Conditions
Ic Continuous
Collector current
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Reverse voltage for FWD
VR
Forword current for FWD
IF IF pulse
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
Screw torque
Mounting (*2) Terminals (*3)
-
Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable Value : 2.5 to 3.5 Nm (M5 or M6) Note *3: Recommendable Value : 2.5 to 3.5 Nm (M5)
1ms
1ms 1 device Continuous 1ms
AC : 1min.
Tc=25°C Tc=80°C Tc=25°C Tc=80°C
Maximum ratings 1200 ±20 300 200 600 400 100 200 1040 1200 300 600 +150
-40~+125 2500 3.5 4.5
Units V V
A
W V A °C °C VAC Nm
1
1MBI200U4H-120L-50
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance Turn-on time
Turn-off time
Forward on voltage
Reverse Current
Forward on voltage
Reverse recovery time Lead resistance, terminal-chip(*4) Note *4: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Symbols
ICES IGES VGE (th)
VCE (sat) (terminal)
VCE (sat) (chip)
Cies ton tr tr(i) toff tf
VF (terminal)
VF (chip)
IR
VF (terminal)
VF (chip)
trr R lead
Conditions
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 200mA
Tj=25°C
VGE = 15V IC = 200A
Tj=125°C Tj=25°C
Tj=125°C
VGE = 0V, VCE = 10V, f = 1MHz
VCC = 600V, IC = 200A VGE = ±15V, RG = 3Ω
VGE = 0V IF = 100A
VCE = 1200V
VGE = 0V IF =300A
IF = 300A
Tj=25°C Tj=125°C Tj=25°C Tj=125°C
Tj=25°C Tj=125°C Tj=25°C Tj=125°C
Items
Symbols Conditions
IGBT
Thermal resistance (1device)
Rth(j-c)
Inverse Diode FWD
Contact thermal resistance
Rth(c-f) with Thermal Compound (*5)
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics min. typ. max.
- - 2.0 - - 400 4.5 6.5 8.5 - 2.10 2.25 - 2.30 - 1.90 2.05 - 2.10 - 22 - 0.32 1.20 - 0.10 0.60 - 0.03 - 0.41 1.00 - 0.07 0.30 - 1.75 1.90 - 1.85 - 1.60 1.75 - 1.75 - - 3.0 - 1.85 2.00 - 2.00 - 1.60 1.75 - 1.75 - - 0.35 - 1.00 -
Units mA nA V V nF
µs
V mA V µs mΩ
Characteristics min. typ. max.
- - 0.12 - - 0.40 - - 0.13 - 0.025 -
Units °C/W
2
1MBI200U4H-120L-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.) Tj=25oC / chip
200
150
VGE=20V 15V
12V
Collector current : Ic [ A ]
Collector current : Ic [ A ]
100
50
0 0
10V
1234 Collector-Emitter voltage : VCE [ V ]
8V 5
Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
500
400 Tj=25oC Tj=125oC
300
200
100
0
01234 Collector-Emitter voltage : VCE [ V ]
5
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f=1MHz, Tj=25oC
100.0
Cies 10.0
Cres 1.0 Coes
Capacitance : Cies, Coes, Cres [ nF ]
0.1 0
10 20 Collector-Emitter voltage : VCE [ V ]
30
3
Collector- Emitter voltage : VCE [ 200V/div ] Gate-Emitter voltage : VGE [ 5V/div ]
Collector-Emitter voltage : VCE [ V ]
Collector current : Ic [A ]
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.) Tj=125oC / chip
200
150
VGE=20V 15V
12V
100
50
0 0
10V
8V
1234 Collector-Emitter voltage : VCE [ V ]
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25oC / chip
10
8
6
4
Ic=200A 2 Ic=100A
Ic=50A 0
5 10 15 20 25 Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.) Vcc=600V, Ic=200A, Tj=25oC
VCE
VGE
0 0 200 400 600 800 1000 Gate charge : Qg [ nC ]
1MBI200U4H-120L-50
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=3Ω, Tj=25oC
10000
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=3Ω, Tj=125oC
Switching time : ton, tr, toff, tf [ nsec ]
1000 100
toff
ton tr tf
1000 100
ton toff tr tf
10 0
100 200 300 Collector current : Ic [ A ]
400
10000
Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj=25oC
1000
ton toff
tr
100 tf
10 1
10 100 Gate resistance : RG [Ω]
1000
Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj=125oC 50
40 Eon
30 Eoff 20
10 Err
0 1 10 100 1.