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6MBI450V-170-50 Dataheets PDF



Part Number 6MBI450V-170-50
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 6MBI450V-170-50 Datasheet6MBI450V-170-50 Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ 6MBI450V-170-50 IGBT Modules IGBT MODULE (V series) 1700V / 450A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage S.

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http://www.fujielectric.com/products/semiconductor/ 6MBI450V-170-50 IGBT Modules IGBT MODULE (V series) 1700V / 450A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES IC Conditions Continuous TC=25°C TC=100°C Maximum ratings 1700 ±20 600 450 Units V V Inverter Collector current IC pulse 1ms 900 A -IC -IC pulse 1ms 450 900 Collector power dissipation Junction temperature PC 1 device Tj 2500 175 W Operating junction temperature (under switching conditions) Tjop 150 °C Case temperature TC Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Between thermistor and others (*2) Viso Screw torque Mounting (*3) Terminals (*4) - AC : 1min. 125 -40 ~ 125 3400 3.5 4.5 VAC Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable Value : 2.5-3.5 Nm (M5) Note *4: Recommendable Value : 3.5-4.5 Nm (M6) 1 7865 FEBRUARY 2013 6MBI450V-170-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Inverter Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Resistance B value ICES IGES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) RG (int) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr R B VGE = 0V, VCE = 1700V VCE = 0V, VGE = ±20V VCE = 20V, IC = 450mA VGE = 15V IC = 450A Tj=25°C Tj=125°C Tj=150°C VGE = 15V IC = 450A Tj=25°C Tj=125°C Tj=150°C - VCE = 10V, VGE = 0V, f = 1MHz VCC = 900V IC = 450A VGE = ±15V RG = 3.3Ω LS = 80nH VGE = 0V, IF = 450A VGE = 0V, IF = 450A IF = 450A T = 25°C T = 100°C T = 25 / 50°C Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Thermistor Characteristics min. typ. max. - - 3.0 - - 600 6.0 6.5 7.0 - 2.65 3.10 - 3.10 - 3.15 - 2.00 2.45 - 2.45 - 2.50 - 1.67 - 40 - 900 - 400 - 100 - 1300 - 100 - 2.45 2.90 - 2.75 - 2.70 - 1.80 2.25 - 2.10 - 2.05 - 250 - 5000 465 495 520 3305 3375 3450 Units mA nA V V Ω nF nsec V nsec Ω K Thermal resistance characteristics Items Symbols Conditions Thermal resistance (1device) Rth(j-c) Inverter IGBT Inverter FWD Contact thermal resistance (1device) (*5) Rth(c-f) with Thermal Compound Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound. Characteristics min. typ. max. - - 0.06 - - 0.10 - 0.0167 - Units °C/W Equivalent Circuit Schematic 2 6MBI450V-170-50 Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 1000 VGE=20V 15V 12V 800 Collector current : IC [A] 600 10V 400 200 8V 0 012345 Collector-Emitter voltage: VCE [V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 1000 Tj=125℃ 800 Collector current : IC [A] 600 Tj=25℃ 400 Tj=150℃ 200 0 012345 Collector-Emitter voltage: VCE [V] [ Inverter ] Gate Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 1000 Gate Capacitance: Cies, Coes, resC [nF] 100 Cies 10 Coes Cres 1 0 10 20 30 Collector - Emitter voltage: VCE [V] 3 Gate - Emitter voltage: GEV [V] Collector - Emitter voltage : CEV [V] Collector current : IC [A] IGBT Modules http://www.fujielectric.com/products/semiconductor/ [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 1000 VGE= 20V 15V 800 12V 600 10V 400 200 8V 0 012345 Collector-Emitter voltage: VCE [V] [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip 10 8 6 4 IC=900A 2 IC=450A IC=225A 0 5 20 10 15 20 Gate - Emitter voltage: VGE [V] [ Inverter ] Dynamic gate charge (typ.) VCC=900V, IC=450A,Tj= 25°C 15 VCE 10 5 0 -5 VGE -10 -15 -20 -5000 -2500 0 2500 Gate charge: QG [nC] 25 1000 800 600 400 200 0 -200 -400 -600 -800 -1000 5000 Collector - Emitter voltage: CEV [V] 6MBI450V-170-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] [ Inverter ] Switching time vs. Collector current (typ.) VCC=900V, VGE=±15V, RG=3.3Ω, Tj= 25°C 10000 1000 100 toff ton tr tf 10 0 200 400 600 800 Collector current: IC [A] 1000 [ Inverter ] Switching time vs. Gate resistance (typ.) VCC=900V, IC=450A, VGE=±15V, Tj.


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