Document
http://www.fujielectric.com/products/semiconductor/
6MBI450V-170-50
IGBT Modules
IGBT MODULE (V series) 1700V / 450A / 6 in one package
Features Compact Package P.C.Board Mount Low VCE (sat)
Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Collector-Emitter voltage Gate-Emitter voltage
Symbols VCES VGES
IC
Conditions
Continuous
TC=25°C TC=100°C
Maximum ratings 1700 ±20 600 450
Units
V V
Inverter
Collector current
IC pulse
1ms
900 A
-IC -IC pulse
1ms
450 900
Collector power dissipation Junction temperature
PC 1 device Tj
2500 175
W
Operating junction temperature (under switching conditions)
Tjop
150 °C
Case temperature
TC
Storage temperature
Tstg
Isolation voltage
Between terminal and copper base (*1) Between thermistor and others (*2)
Viso
Screw torque
Mounting (*3) Terminals (*4)
-
AC : 1min.
125 -40 ~ 125
3400
3.5 4.5
VAC Nm
Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable Value : 2.5-3.5 Nm (M5) Note *4: Recommendable Value : 3.5-4.5 Nm (M6)
1 7865 FEBRUARY 2013
6MBI450V-170-50
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols Conditions
Inverter
Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Internal gate resistance Input capacitance Turn-on time Turn-off time
Forward on voltage
Reverse recovery time Resistance B value
ICES IGES VGE (th)
VCE (sat) (terminal)
VCE (sat) (chip)
RG (int) Cies ton tr tr (i) toff tf
VF (terminal)
VF (chip)
trr
R
B
VGE = 0V, VCE = 1700V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 450mA
VGE = 15V IC = 450A
Tj=25°C Tj=125°C Tj=150°C
VGE = 15V IC = 450A
Tj=25°C Tj=125°C Tj=150°C
-
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 900V IC = 450A VGE = ±15V RG = 3.3Ω LS = 80nH
VGE = 0V, IF = 450A
VGE = 0V, IF = 450A
IF = 450A T = 25°C T = 100°C T = 25 / 50°C
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Thermistor
Characteristics min. typ. max.
- - 3.0 - - 600 6.0 6.5 7.0 - 2.65 3.10 - 3.10 - 3.15 - 2.00 2.45 - 2.45 - 2.50 - 1.67 - 40 - 900 - 400 - 100 - 1300 - 100 - 2.45 2.90 - 2.75 - 2.70 - 1.80 2.25 - 2.10 - 2.05 - 250 - 5000 465 495 520 3305 3375 3450
Units mA nA V
V
Ω nF
nsec
V
nsec Ω K
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Rth(j-c)
Inverter IGBT Inverter FWD
Contact thermal resistance (1device) (*5)
Rth(c-f)
with Thermal Compound
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics min. typ. max.
- - 0.06 - - 0.10 - 0.0167 -
Units °C/W
Equivalent Circuit Schematic
2
6MBI450V-170-50
Characteristics (Representative)
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
1000
VGE=20V 15V
12V
800
Collector current : IC [A]
600 10V
400
200 8V
0 012345
Collector-Emitter voltage: VCE [V]
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
1000
Tj=125℃
800
Collector current : IC [A]
600 Tj=25℃
400
Tj=150℃
200
0 012345
Collector-Emitter voltage: VCE [V] [ Inverter ]
Gate Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C
1000
Gate Capacitance: Cies, Coes, resC [nF]
100
Cies
10 Coes
Cres 1
0 10 20 30 Collector - Emitter voltage: VCE [V]
3
Gate - Emitter voltage: GEV [V]
Collector - Emitter voltage : CEV [V]
Collector current : IC [A]
IGBT Modules http://www.fujielectric.com/products/semiconductor/
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
1000
VGE= 20V 15V
800 12V
600
10V 400
200 8V
0 012345 Collector-Emitter voltage: VCE [V]
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip 10
8
6
4
IC=900A 2 IC=450A
IC=225A
0 5
20
10 15 20
Gate - Emitter voltage: VGE [V]
[ Inverter ] Dynamic gate charge (typ.) VCC=900V, IC=450A,Tj= 25°C
15 VCE
10
5
0
-5 VGE
-10
-15
-20 -5000
-2500
0
2500
Gate charge: QG [nC]
25
1000 800 600 400 200 0 -200 -400 -600 -800 -1000 5000
Collector - Emitter voltage: CEV [V]
6MBI450V-170-50
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
[ Inverter ] Switching time vs. Collector current (typ.)
VCC=900V, VGE=±15V, RG=3.3Ω, Tj= 25°C
10000
1000 100
toff ton
tr
tf
10 0
200 400 600 800 Collector current: IC [A]
1000
[ Inverter ] Switching time vs. Gate resistance (typ.) VCC=900V, IC=450A, VGE=±15V, Tj.