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6MBI180VB-120-55 Dataheets PDF



Part Number 6MBI180VB-120-55
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 6MBI180VB-120-55 Datasheet6MBI180VB-120-55 Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ 6MBI180VB-120-55 IGBT Modules IGBT MODULE (V series) 1200V / 180A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage .

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http://www.fujielectric.com/products/semiconductor/ 6MBI180VB-120-55 IGBT Modules IGBT MODULE (V series) 1200V / 180A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES IC Conditions Continuous TC=80°C Maximum ratings 1200 ±20 150 Units V V Inverter Collector current IC pulse -IC 1ms TC=80°C 400 150 A Collector power dissipation -IC pulse PC 1ms 1 device 400 1075 W Junction temperature Tj 175 Operating junciton temperature (under switching conditions) Tjop 150 °C Case temperature TC 125 Storage temperature Tstg -40 ~ +125 Isolation voltage Between terminal and copper base (*1) Between thermistor and others (*2) Viso AC : 1min. 2500 VAC Screw torque Mounting (*3) - M5 3.5 N m Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 6MBI180VB-120-55 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Inverter Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Resistance B value ICES IGES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) RG (int) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr R B VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 200mA VGE = 15V IC = 200A Tj=25°C Tj=125°C Tj=150°C VGE = 15V IC = 200A Tj=25°C Tj=125°C Tj=150°C - VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V IC = 200A VGE = +15 / -15V RG = 1.2Ω IF = 200A IF = 200A IF = 200A T = 25°C T = 100°C T = 25 / 50°C Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Thermistor Characteristics min. typ. max. - - 1.0 - - 200 6.0 6.5 7.0 - 2.70 3.15 - 3.05 - 3.10 - 1.85 2.30 - 2.20 - 2.25 - 3.8 - 16.5 - 0.39 1.20 - 0.09 0.60 - 0.03 - 0.53 1.00 - 0.06 0.30 - 2.55 3.00 - 2.70 - 2.65 - 1.70 2.15 - 1.85 - 1.80 - - 0.35 - 5000 465 495 520 3305 3375 3450 Units mA nA V V Ω nF µs V µs Ω K Thermal resistance characteristics Items Symbols Conditions Thermal resistance (1device) Rth(j-c) Inverter IGBT Inverter FWD Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. Characteristics min. typ. max. - - 0.14 - - 0.25 - 0.05 - Units °C/W Equiva.


6MBI180VB-120-50 6MBI180VB-120-55 6MBI50VW-120-50


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