Document
SPECIFICATION
Device Name Type Name
: IGBT MODULE
(RoHS compliant product)
: 2MBI200U4B-120-50
Spec. No. : MS5F6577
May. 11 ’06 K.Muramatsu May. 11 ’06 M.Watanabe T.Miyasaka
K.Yamada
MS5F6577
1a 14
H04-004-07b
Revised Records
Date
Classification
Ind.
May.-11 -’06 Enactment
Content
Aug.-09 -’06 Revision
a Revised Reliability test
results (P9/14)
Applied date
Drawn
Checked Checked Approved
Issued date
M.W atanabe K.Yamada T.Miyasaka
K.Muramatsu S.Ogawa K.Yamada T.Miyasaka
MS5F6577
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H04-004-06b
2MBI200U4B-120-50
1. Outline Drawing ( Unit : mm )
(RoHS compliant product)
2. Equivalent circuit
MS5F6577
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H04-004-03a
3. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified )
Items
Sym b o l s
Co n d i t i o n s
Collector-Emitter voltage Gate-Emitter voltage
VCES VGES
Ic
Continuous
Collector current
Icp 1ms
-Ic
-Ic pulse
1ms
Collector Power Dissipation
Pc 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
Viso
AC : 1min.
Screw Mounting (*2) Torque Terminals (*2)
-
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : 2.5 to 3.5 Nm (M5)
Tc=25oC Tc=80oC Tc=25oC Tc=80oC
Max i m u m
Rat i n g s 1200 ±20 300 200 600 400 200 400 1040 +150
-40 to +125
Units V V
A
W oC
2500
VAC
3.5 N m
4. Electrical characteristics ( at Tj= 25oC unless otherwise specified )
Items
Sym b o l s
Co n d i t i o n s
Ch arac t eri s t i c s min. typ. max.
Zero gate voltage collector current
ICES
VCE=1200V VGE=0V
- - 2.0
Gate-Emitter leakage current
IGES
VCE=0V VGE=±20V
- - 400
Gate-Emitter threshold voltage
VGE(th)
VCE=20V Ic=200mA
4.5 6.5 8.5
VCE(sat) Ic=200A
Tj=25oC
-
2.10 2.25
Collector-Emitter
(terminal) VGE=15V
Tj=125oC
-
2.30
-
saturation voltage
VCE(sat)
Tj=25oC
-
1.90 2.05
(chip)
Tj=125oC
-
2.10
-
Input capacitance
Cies
VCE=10V,VGE=0V,f=1MHz
-
22
-
ton Vcc=600V
- 0.32 1.20
Turn-on time
tr Ic=200A
- 0.10 0.60
tr(i) VGE=±15V
- 0.03
-
Turn-off time
toff RG=3.0Ω tf
- 0.41 1.00 - 0.07 0.30
VF
IF=200A
Tj=25oC
-
1.85 2.00
Forward on voltage
(terminal) VF
VGE=0V
Tj=125oC Tj=25oC
-
1.95 1.65
1.80
(chip)
Tj=125oC
-
1.75
-
Reverse recovery time
trr
IF=200A
- - 0.35
Lead resistance, terminal-chip (*3)
R lead
- 0.97
-
(*3) Biggest internal terminal resistance among arm.
Units mA nA V
V nF
us
V us mΩ
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H04-004-03a
5. Thermal resistance characteristics
Items
Sym b o l s
Co n d i t i o n s
Ch arac t eri s t i c s min. typ. max.
Thermal resistance(1device) Rth(j-c)
IGBT FWD
- - 0.12 - - 0.20
Contact Thermal resistance (1 device) (*4)
Rth(c-f)
with Thermal Compound
- 0.025 -
(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.
Units oC/W
6. Indication on module Logo of production
Lot.No.
2MBI200U4B-120-50
200A 1200V
Place of manufacturing (code)
7. Applicable category This specification is applied to IGBT-Module named 2MBI200U4B-120-50.
8. Storage and transportation notes • The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . • Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
• Avoid exposure to corrosive gases and dust. • Avoid excessive external force on the module. • Store modules with unprocessed terminals. • Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
L
RG V GE
V CE Ic
0V VGE
VCE V cc
0V Ic 0A
10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No. - Products quantity in a packing box
~~ ~~ ~~
90%
tr r 9 0%
Ir r Ic
10% 10%
tr ( i ) tr to n
VCE
to f f
0V
9 0% 10%
tf
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H04-004-03a
11. List of material (リスト)
No. Parts
(Total weight of soldering material(typ) : 6.3 g)
Material (main)
Ref.
1 Base Plate
Cu Ni plating
2 Main terminal
Cu Ni plating
3 Sub terminal
Cu or Brass Ni plating
4 Cover
PPS resin UL 94V-0
5 Case
PPS resin UL 94V-0
6 Isolation substrate
Al2O3 + Cu
7 IGBT chip
Silicon
(Not drawn in above)
8 FWD chip
Silicon
(Not drawn in above)
9 Wiring
Aluminum
10 Silicone Gel
Silicone resin
11 Adhesive
Silicone resin
12 Solder (Under chip)
13 Solder (Under Isolation substrate ) Solder
14 (Between terminal and Isolation substrate)
15 Label
Sn/Ag base Sn/Ag base
Sn/Ag base Paper
(Not drawn in above) (Not drawn in above)
(Not drawn in above) (Not drawn in above)
16 Nut
Fe Trivalent Chromate treatment
17 Ring
Brass
12. RoHS Directive Compliance(RoHS について)
IGBTモジュールはデバイステクノロジーがしているRoHSにするMS5F6209をする。 (MS5F6212)はとする。
The document (MS5F6209) about RoHS that Fuji Electric Device Technology issued is applied to this IGBT Module. The Japanese Edition(MS5F6212) is made into a reference grade.
MS5F6577
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H04-004-03a
13. Reliability test results
Re.