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2MBI200U4B-120-50 Dataheets PDF



Part Number 2MBI200U4B-120-50
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 2MBI200U4B-120-50 Datasheet2MBI200U4B-120-50 Datasheet (PDF)

SPECIFICATION Device Name Type Name : IGBT MODULE (RoHS compliant product) : 2MBI200U4B-120-50 Spec. No. : MS5F6577 May. 11 ’06 K.Muramatsu May. 11 ’06 M.Watanabe T.Miyasaka K.Yamada MS5F6577 1a 14 H04-004-07b Revised Records Date Classification Ind. May.-11 -’06 Enactment Content Aug.-09 -’06 Revision a Revised Reliability test results (P9/14) Applied date Drawn Checked Checked Approved Issued date M.W atanabe K.Yamada T.Miyasaka K.Muramatsu S.Ogawa K.Yamada T.Miyasaka MS5F.

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Document
SPECIFICATION Device Name Type Name : IGBT MODULE (RoHS compliant product) : 2MBI200U4B-120-50 Spec. No. : MS5F6577 May. 11 ’06 K.Muramatsu May. 11 ’06 M.Watanabe T.Miyasaka K.Yamada MS5F6577 1a 14 H04-004-07b Revised Records Date Classification Ind. May.-11 -’06 Enactment Content Aug.-09 -’06 Revision a Revised Reliability test results (P9/14) Applied date Drawn Checked Checked Approved Issued date M.W atanabe K.Yamada T.Miyasaka K.Muramatsu S.Ogawa K.Yamada T.Miyasaka MS5F6577 2a 14 H04-004-06b 2MBI200U4B-120-50 1. Outline Drawing ( Unit : mm ) (RoHS compliant product) 2. Equivalent circuit MS5F6577 3a 14 H04-004-03a 3. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified ) Items Sym b o l s Co n d i t i o n s Collector-Emitter voltage Gate-Emitter voltage VCES VGES Ic Continuous Collector current Icp 1ms -Ic -Ic pulse 1ms Collector Power Dissipation Pc 1 device Junction temperature Tj Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso AC : 1min. Screw Mounting (*2) Torque Terminals (*2) - (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : 2.5 to 3.5 Nm (M5) Tc=25oC Tc=80oC Tc=25oC Tc=80oC Max i m u m Rat i n g s 1200 ±20 300 200 600 400 200 400 1040 +150 -40 to +125 Units V V A W oC 2500 VAC 3.5 N m 4. Electrical characteristics ( at Tj= 25oC unless otherwise specified ) Items Sym b o l s Co n d i t i o n s Ch arac t eri s t i c s min. typ. max. Zero gate voltage collector current ICES VCE=1200V VGE=0V - - 2.0 Gate-Emitter leakage current IGES VCE=0V VGE=±20V - - 400 Gate-Emitter threshold voltage VGE(th) VCE=20V Ic=200mA 4.5 6.5 8.5 VCE(sat) Ic=200A Tj=25oC - 2.10 2.25 Collector-Emitter (terminal) VGE=15V Tj=125oC - 2.30 - saturation voltage VCE(sat) Tj=25oC - 1.90 2.05 (chip) Tj=125oC - 2.10 - Input capacitance Cies VCE=10V,VGE=0V,f=1MHz - 22 - ton Vcc=600V - 0.32 1.20 Turn-on time tr Ic=200A - 0.10 0.60 tr(i) VGE=±15V - 0.03 - Turn-off time toff RG=3.0Ω tf - 0.41 1.00 - 0.07 0.30 VF IF=200A Tj=25oC - 1.85 2.00 Forward on voltage (terminal) VF VGE=0V Tj=125oC Tj=25oC - 1.95 1.65 1.80 (chip) Tj=125oC - 1.75 - Reverse recovery time trr IF=200A - - 0.35 Lead resistance, terminal-chip (*3) R lead - 0.97 - (*3) Biggest internal terminal resistance among arm. Units mA nA V V nF us V us mΩ MS5F6577 4a 14 H04-004-03a 5. Thermal resistance characteristics Items Sym b o l s Co n d i t i o n s Ch arac t eri s t i c s min. typ. max. Thermal resistance(1device) Rth(j-c) IGBT FWD - - 0.12 - - 0.20 Contact Thermal resistance (1 device) (*4) Rth(c-f) with Thermal Compound - 0.025 - (*4) This is the value which is defined mounting on the additional cooling fin with thermal compound. Units oC/W 6. Indication on module Logo of production Lot.No. 2MBI200U4B-120-50 200A 1200V Place of manufacturing (code) 7. Applicable category This specification is applied to IGBT-Module named 2MBI200U4B-120-50. 8. Storage and transportation notes • The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . • Store modules in a place with few temperature changes in order to avoid condensation on the module surface. • Avoid exposure to corrosive gases and dust. • Avoid excessive external force on the module. • Store modules with unprocessed terminals. • Do not drop or otherwise shock the modules when transporting. 9. Definitions of switching time L RG V GE V CE Ic 0V VGE VCE V cc 0V Ic 0A 10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No. - Products quantity in a packing box ~~ ~~ ~~ 90% tr r 9 0% Ir r Ic 10% 10% tr ( i ) tr to n VCE to f f 0V 9 0% 10% tf MS5F6577 5a 14 H04-004-03a 11. List of material (リスト) No. Parts (Total weight of soldering material(typ) : 6.3 g) Material (main) Ref. 1 Base Plate Cu Ni plating 2 Main terminal Cu Ni plating 3 Sub terminal Cu or Brass Ni plating 4 Cover PPS resin UL 94V-0 5 Case PPS resin UL 94V-0 6 Isolation substrate Al2O3 + Cu 7 IGBT chip Silicon (Not drawn in above) 8 FWD chip Silicon (Not drawn in above) 9 Wiring Aluminum 10 Silicone Gel Silicone resin 11 Adhesive Silicone resin 12 Solder (Under chip) 13 Solder (Under Isolation substrate ) Solder 14 (Between terminal and Isolation substrate) 15 Label Sn/Ag base Sn/Ag base Sn/Ag base Paper (Not drawn in above) (Not drawn in above) (Not drawn in above) (Not drawn in above) 16 Nut Fe Trivalent Chromate treatment 17 Ring Brass 12. RoHS Directive Compliance(RoHS について)  IGBTモジュールはデバイステクノロジーがしているRoHSにするMS5F6209をする。  (MS5F6212)はとする。 The document (MS5F6209) about RoHS that Fuji Electric Device Technology issued is applied to this IGBT Module. The Japanese Edition(MS5F6212) is made into a reference grade. MS5F6577 6a 14 H04-004-03a 13. Reliability test results Re.


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