2MBI200U4D-120

52'%+(+%#6+10 &GXKEG0COG IGBT MODULE 6[RG0COG 2MBI200U4D-120 5RGE0Q MS5F 6033 Feb. 09 ¶05 S.Miyashita Feb. 09 ¶05 T.Miyasaka K.Yamada Y.Seki MS5F6033 1 13 *D 4GXKUGF4GEQTFU &CVG %NCUUK HKECVKQP +PF Feb.-09 -¶05 'PCEVOGPV %QPVGPV #RRNKGF FCVG &TCYP %JGEMGF %JGEMGF #RRTQXGF +UUWGF FCVG T.Miyasaka K.Yamada Y.Seki MS5F6033 2 13 *D 1. Outline Drawing ( Unit : mm ) 2MBI200U4D-120 2. Equivalent circuit MS5F6033 3 13 *C 3. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified ) It em s Sym b o l s Conditions Collector-Emitter voltage Gate-Emitter voltage VCES VGES Ic Continuous Collector current Icp 1ms -Ic -Ic pulse 1ms Collector Power Dissipation Pc 1 device Junction temperature Tj Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso AC : 1min. Screw Mounting (*2) Torque Terminals (*3) - (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6) (*3) Recommendable Value : Terminals 3.5 to 4.5 Nm (M6) Tc=25oC Tc=80oC Tc=25oC Tc=80oC Max i m u m Ratings 1200 ±20 300 200 600 400 200 400 1040 +150 -40 to +125 Units V V A W oC 2500 VAC 3.5 4.5 Nm 4. Electrical characteristics ( at Tj= 25oC unless otherwise specified ) It em s Sym b o l s Conditions Characteristics min. typ. max. Zero gate voltage collector current ICES VCE=1200V VGE...