Document
http://www.fujielectric.com/products/semiconductor/
2MBI100VA-060-50
IGBT MODULE (V series) 600V / 100A / 2 in one package
Features High speed switching Voltage drive Low Inductance module structure
Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Symbols
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
IC
Collector current
IC pulse -IC
-IC pulse
Collector power dissipation
PC
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Case temperature
TC
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1) Viso
Screw torque
Mounting (*2) Terminals (*3)
-
Conditions
Continuous 1ms 1ms 1 device
AC : 1min.
Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable Value : 3.0-5.0 Nm (M5 or M6) Note *3: Recommendable Value : 2.5-3.5 Nm (M5)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
TC=100°C
Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Internal gate resistance Input capacitance Turn-on time Turn-off time
Forward on voltage
Reverse recovery time
Thermal resistance characteristics
Symbols
ICES IGES VGE (th)
VCE (sat) (terminal)
VCE (sat) (chip)
RG (int) Cies ton tr tr (i) toff tf
VF (terminal)
VF (chip)
trr
Conditions
VGE = 0V, VCE = 600V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 100mA
VGE = 15V IC = 100A
Tj=25°C Tj=125°C Tj=150°C
VGE = 15V IC = 100A
Tj=25°C Tj=125°C Tj=150°C
-
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 300V LS = 30nH
IC = 100A
VGE = ±15V
RG = 13Ω
Tj = 150°C
VGE = 0V IF = 100A
Tj=25°C Tj=125°C Tj=150°C
VGE = 0V IF = 100A
Tj=25°C Tj=125°C Tj=150°C
IF = 100A
Items
Symbols Conditions
Thermal resistance (1device) Contact thermal resistance (1device) (*4)
Rth(j-c) Rth(c-f)
IGBT FWD with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
IGBT Modules
Maximum ratings 600 ±20 100 200 100 200 650 175 150 125
-40 ~ 125 2500 5.0 5.0
Units V V
A
W
°C
VAC Nm
Characteristics min. typ. max.
- - 1.0 - - 200 6.2 6.7 7.2 - 1.70 2.15 - 2.00 -
2.20 - 1.60 2.05 - 1.90 -
2.10 -9- 6.4 - 650 - 300 - 100 - 600 - 40 - 1.65 2.10 - 1.55 -
1.52 - 1.60 2.05 - 1.50 -
1.47 - 200 -
Units mA nA V
V
Ω nF
nsec
V
nsec
Characteristics min. typ. max.
- - 0.45
- - 0.80
- 0.050 -
Units °C/W
1
2MBI100VA-060-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip
250
VGE=20V 15V 12V 200
Collector current: IC [A]
150 10V
100
50
0 0
8V
1234 Collector-Emitter voltage: VCE [V]
5
Collector Current: IC [A]
Collector current vs. Collector-Emitter voltage (typ.) VGE= 15.