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2MBI100VA-120-50 Dataheets PDF



Part Number 2MBI100VA-120-50
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 2MBI100VA-120-50 Datasheet2MBI100VA-120-50 Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ 2MBI100VA-120-50 IGBT MODULE (V series) 1200V / 100A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Symbols Collector-Emitter voltage VCES.

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http://www.fujielectric.com/products/semiconductor/ 2MBI100VA-120-50 IGBT MODULE (V series) 1200V / 100A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Symbols Collector-Emitter voltage VCES Gate-Emitter voltage VGES IC Collector current IC pulse -IC -IC pulse Collector power dissipation PC Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso Screw torque Mounting (*2) Terminals (*3) - Conditions Continuous 1ms 1ms 1 device AC : 1min. Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable Value : 3.0-5.0 Nm (M5 or M6) Note *3: Recommendable Value : 2.5-3.5 Nm (M5) Electrical characteristics (at Tj= 25°C unless otherwise specified) TC=100°C Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Thermal resistance characteristics Symbols ICES IGES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) RG (int) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr Conditions VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 100mA VGE = 15V IC = 100A Tj=25°C Tj=125°C Tj=150°C VGE = 15V IC = 100A Tj=25°C Tj=125°C Tj=150°C - VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V LS = 30nH IC = 100A VGE = ±15V RG = 1.6Ω Tj = 150°C VGE = 0V IF = 100A Tj=25°C Tj=125°C Tj=150°C VGE = 0V IF = 100A Tj=25°C Tj=125°C Tj=150°C IF = 100A Items Symbols Conditions Thermal resistance (1device) Contact thermal resistance (1device) (*4) Rth(j-c) Rth(c-f) IGBT FWD with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. IGBT Modules Maximum ratings 1200 ±20 100 200 100 200 555 175 150 125 -40 ~ 125 2500 5.0 5.0 Units V V A W °C VAC Nm Characteristics min. typ. max. - - 1.0 - - 200 6.0 6.5 7.0 - 1.90 2.35 - 2.20 - 2.25 - 1.75 2.20 - 2.05 - 2.10 - 7.5 - 9.1 - 600 - 200 - 50 - 600 - 40 - 1.80 2.25 - 1.95 - 1.90 - 1.70 2.15 - 1.85 - 1.80 - 150 - Units mA nA V V Ω nF nsec V nsec Characteristics min. typ. max. - - 0.27 - - 0.48 - 0.050 - Units °C/W 1 2MBI100VA-120-50 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 250 VGE=20V 15V 12V 200 Collector current: IC [A] 150 10V 100 50 0 0 8V 1234 Collector-Emitter voltage: VCE [V] 5 Collector Current: IC [A] Collector current vs. Collector-Emitter voltage (ty.


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