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2MBI650VXA-170E-50 Dataheets PDF



Part Number 2MBI650VXA-170E-50
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 2MBI650VXA-170E-50 Datasheet2MBI650VXA-170E-50 Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ 2MBI650VXA-170E-50 IGBT Modules IGBT MODULE (V series) 1700V / 650A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage.

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http://www.fujielectric.com/products/semiconductor/ 2MBI650VXA-170E-50 IGBT Modules IGBT MODULE (V series) 1700V / 650A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Symbols VCES Conditions Gate-Emitter voltage VGES Inverter Ic Continuous Collector current Ic pulse -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg Isolation voltage between terminal and copper base (*1) between thermistor and others (*2) Viso Mounting Screw torque (*3) Main Terminals - Sense Terminals 1ms 1ms 1 device AC : 1min. M5 M8 M4 Tc=25°C Tc=100°C Maximum ratings 1700 ±20 900 650 1300 650 1300 4150 175 150 150 -40 ~ +150 4000 6.0 10.0 2.1 Units V V A W °C VAC Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable Value : Mounting 3.0 ~   6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8) Recommendable Value : Sense Terminals  1.8 ~ 2.1 Nm (M4) Electrical characteristics (at Tj= 25°C unless otherwise specified) Inverter Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Symbols ICES IGES VGE (th) VCE (sat) (terminal) (*4) VCE (sat) (chip) Cies ton tr tr (i) toff tf Conditions VGE = 0V, VCE = 1700V VCE = 0V, VGE = ±20V VCE = 20V, IC = 650mA Tj=25°C Tj=125°C VGE = 15V Tj=150°C IC = 650A Tj=25°C Tj=125°C Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VCC = 900V IC = 650A VGE = ±15V RG = +1.8/-2.7Ω Characteristics min. typ. max. - - 4.0 - - 800 6.0 6.5 7.0 - 2.10 2.55 - 2.50 - 2.55 - 2.00 2.45 - 2.40 - 2.45 - 63 - 1.25 - 0.50 - 0.15 - 1.55 - 0.15 - Forward on voltage VF (terminal) (*4) VF (chip) VGE = 0V IF = 650A Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C - 1.95 2.40 - 2.20 - 2.15 - 1.85 2.30 - 2.10 - 2.05 - Thermistor Reverse recovery time Resistance B value trr IF = 650A R T=25°C T=100°C B T=25/50°C 465 3305 0.24 5000 495 3375 520 3450 Units mA nA V V nF µs V µs Ω K Note *4: Please refer to page 6 , there is definition of on-state voltage at terminal. Thermal resistance characteristics Items Thermal resistance (1device) Contact thermal resistance (1device) (*5) Symbols Rth(j-c) Rth(c-f) Conditions Inverter IGBT Inverter FWD with Thermal Compound Characteristics min. typ. max. - - 0.036 - - 0.072 - 0.0125 - Units °C/W Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 2MBI650VXA-170E-50 Characteristics (Representative) Collector current: Ic [A] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 0 VGE=20V 15V 12V 10V 8V 12345 Collector-Emitter voltage: VCE [V] Collector Current: Ic [A] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 0 Tj=25°C 125°C 150°C 12345 Collector-Emitter Voltage: VCE [V] [INVERTER] Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= 0V, ƒ= 1MHz, Tj= 25°C 1000 100 Cies Collector-Emitter Voltage: VCE [V] Collector current: Ic [A] IGBT Modules http://www.fujielectric.com/products/semiconductor/ [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 0 VGE= 20V 123 15V 12V 10V 8V 45 Collector-Emitter voltage: VCE [V] [INVERTER] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip 10 8 6 4 Ic=1300A 2 Ic=650A Ic=325A 0 5 10 15 20 25 Gate-Emitter Voltage: VGE [V] [INVERTER] Dynamic Gate Charge (typ.) Vcc=900V, Ic=650A, Tj= 25°C VCE VGE Collector-Emitter voltage: VCE [200V/div] Gate-Emitter voltage: VGE [5V/div] Gate Capacitance: Cies, Coes, Cres [nF] *** 10 Cres Coes 1 0 5 10 15 20 25 30 Collector-Emitter voltage: VCE [V] 2 0 1000 2000 3000 4000 5000 6000 7000 8000 Gate charge: Qg [nC] 2MBI650VXA-170E-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] [INVERTER] Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, RG=+1.8/-2.7Ω, Tj=25°C 10000 1000 100 toff ton tr tf 10 0 300 600 900 1200 Collector current: Ic [A] 1500 [INVERTER] Switching time vs. Collec.


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