Document
http://www.fujielectric.com/products/semiconductor/
2MBI650VXA-170E-50
IGBT Modules
IGBT MODULE (V series) 1700V / 650A / 2 in one package
Features High speed switching Voltage drive Low Inductance module structure
Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items Collector-Emitter voltage
Symbols VCES
Conditions
Gate-Emitter voltage
VGES
Inverter
Ic Continuous
Collector current
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Case temperature
TC
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1) between thermistor and others (*2)
Viso
Mounting
Screw torque (*3) Main Terminals
-
Sense Terminals
1ms 1ms 1 device
AC : 1min. M5 M8 M4
Tc=25°C Tc=100°C
Maximum ratings 1700 ±20 900 650 1300 650 1300 4150 175 150 150
-40 ~ +150
4000
6.0 10.0 2.1
Units V V
A
W °C
VAC Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable Value : Mounting
3.0 ~ 6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8)
Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Inverter
Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance Turn-on time
Turn-off time
Symbols
ICES IGES VGE (th) VCE (sat) (terminal) (*4)
VCE (sat) (chip)
Cies ton tr tr (i) toff tf
Conditions
VGE = 0V, VCE = 1700V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 650mA
Tj=25°C
Tj=125°C
VGE = 15V
Tj=150°C
IC = 650A
Tj=25°C
Tj=125°C
Tj=150°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 900V IC = 650A VGE = ±15V RG = +1.8/-2.7Ω
Characteristics min. typ. max.
- - 4.0 - - 800 6.0 6.5 7.0 - 2.10 2.55 - 2.50 - 2.55 - 2.00 2.45 - 2.40 - 2.45 - 63 - 1.25 - 0.50 - 0.15 - 1.55 - 0.15 -
Forward on voltage
VF (terminal) (*4)
VF (chip)
VGE = 0V IF = 650A
Tj=25°C Tj=125°C Tj=150°C
Tj=25°C Tj=125°C Tj=150°C
- 1.95 2.40 - 2.20 - 2.15 - 1.85 2.30 - 2.10 - 2.05 -
Thermistor
Reverse recovery time Resistance B value
trr IF = 650A
R
T=25°C T=100°C
B T=25/50°C
465 3305
0.24 5000 495 3375
520 3450
Units mA nA V
V
nF
µs
V
µs Ω K
Note *4: Please refer to page 6 , there is definition of on-state voltage at terminal.
Thermal resistance characteristics
Items
Thermal resistance (1device) Contact thermal resistance (1device) (*5)
Symbols
Rth(j-c) Rth(c-f)
Conditions
Inverter IGBT Inverter FWD with Thermal Compound
Characteristics min. typ. max.
- - 0.036
- - 0.072
- 0.0125 -
Units °C/W
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
2MBI650VXA-170E-50
Characteristics (Representative)
Collector current: Ic [A]
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip
1300 1200 1100 1000
900 800 700 600 500 400 300 200 100
0 0
VGE=20V
15V 12V
10V
8V 12345
Collector-Emitter voltage: VCE [V]
Collector Current: Ic [A]
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip
1300 1200 1100 1000
900 800 700 600 500 400 300 200 100
0 0
Tj=25°C 125°C 150°C 12345
Collector-Emitter Voltage: VCE [V]
[INVERTER] Gate Capacitance vs. Collector-Emitter Voltage (typ.)
VGE= 0V, ƒ= 1MHz, Tj= 25°C
1000
100 Cies
Collector-Emitter Voltage: VCE [V]
Collector current: Ic [A]
IGBT Modules http://www.fujielectric.com/products/semiconductor/
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip
1300 1200 1100 1000
900 800 700 600 500 400 300 200 100
0 0
VGE= 20V 123
15V 12V
10V
8V 45
Collector-Emitter voltage: VCE [V]
[INVERTER] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
10
8
6
4
Ic=1300A 2 Ic=650A
Ic=325A
0 5 10 15 20 25 Gate-Emitter Voltage: VGE [V]
[INVERTER] Dynamic Gate Charge (typ.) Vcc=900V, Ic=650A, Tj= 25°C
VCE
VGE
Collector-Emitter voltage: VCE [200V/div] Gate-Emitter voltage: VGE [5V/div]
Gate Capacitance: Cies, Coes, Cres [nF] ***
10 Cres
Coes 1
0 5 10 15 20 25 30 Collector-Emitter voltage: VCE [V]
2
0 1000 2000 3000 4000 5000 6000 7000 8000 Gate charge: Qg [nC]
2MBI650VXA-170E-50
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
[INVERTER] Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, RG=+1.8/-2.7Ω, Tj=25°C
10000
1000 100
toff ton tr
tf
10 0
300 600 900 1200 Collector current: Ic [A]
1500
[INVERTER] Switching time vs. Collec.