2MBI225U4J-120-50

SPECIFICATION Device Name Type Name : IGBT Module (RoHS compliant product) : 2MBI225U4J-120-50 Spec. No. : MS5F 6856 May 24 ’07 H.Kaneda May 24 ’07 S.Miyashita T.Miyasaka K.Yamada MS5F6856 1a 15 H04-004-07b Revised Records Date Classification Ind. May-24-’07 Enactment Content Applied date Drawn Checked Checked Approved Issued date S.Miyashita K.Yamada T.Miyasaka Oct.-12 -’07 Revision a Revised characteristics VCE(sat) typ.(P4/15) S.Yoshiwatari S.Miyashita J.Komatsu T.Miyasaka MS5F6856 a 2 15 H04-004-06b 2MBI225U4J-120-50　(RoHS compliant product) 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit GND [Inverter] + G1.1 G 1.2 EX 1.2 [Thermistor] CX 1 G 1.3 T1 T2 Cu-Base G2.1 G 2.2 EX 2.2 G 2.3 - Note : GND terminal current rating DC 1A max. MS5F6856 a 3 15 H04-004-03a 3. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified ) It em s Sym b o l s Conditions Max i m u m Ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=25oC Tc=80oC 300 225 Collector current Icp 1ms Tc=25oC Tc=80oC 600 450 A -Ic 225 -Ic pulse 1ms 450 Collector Power Dissipation Pc 1 device 1040 W Junction temperature Storage temperature Tj Tstg +150 -40 to +125 oC Isolation between terminal and copper base (*1) voltage between thermistor and others (*2) Viso AC : 1min. 2500 VAC Screw Torque Mounting (*3) Terminals (*4) PC-Board (*5) - 3.5 4.5 N m 0.6 (*1) All terminals s...