D2562

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2562 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB=B 10mA) ·Complement to Type 2SB1649 APPLICATIONS ·Designed for series regulator and general purpose applications. .iscsemi.cnABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT wwwVCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 15 A IB Base Current-Continuous Collector Power Dissipation PC @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 1A 85 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn www.DataSheet.in INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2562 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A ,IB= 10mA 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A ,IB= 10mA 3.0 V ICBO Collector Cutoff current VCB= 150V, IE= 0 0.1 mA IEBO Emitter Cutoff current VEB= 5V, IC= 0 0.1 mA hFE DC Current Gain IC= 10A; VCE= 4V 5000 COB Output Capacitance i.cnfT Current-Gain—Bandwidth Product .iscsemSwitching Time...