Transistors
Power transistor (40V, 2A)
2SD1759 / 2SD1861
2SD1759 / 2SD1861
zFeatures 1) Darlington connection for high...
Transistors
Power
transistor (40V, 2A)
2SD1759 / 2SD1861
2SD1759 / 2SD1861
zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB1183 / 2SB1239.
zEquivalent circuit
C
B
RBE 4kΩ
C : Collector B : Base E : Emitter
E
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
2SD1861 2SD1759
Symbol VCBO VCER VEBO IC
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Limits 40 40 5 2 1∗ 1 10 150
−55 to +150
Unit V
V(RBE=10kΩ) V
A(DC)
W
W(TC=25°C) °C °C
zPackaging specifications and hFE
Type Package
hFE Code Basic ordering unit (pieces)
2SD1759 CPT3
1k to 200k TL
2500
2SD1861 ATV 1k to TV2 2500
zExternal dimensions (Unit : mm)
2SD1759
5.5 1.5
2.3 0.9 0.75
0.5 2.3 5.1
6.5
(3) (2) (1)
2.3 0.65
0.9 C0.5
1.0 0.5
0.8Min.
1.5
2.5
9.5
ROHM : CPT3 EIAJ : SC-63
(1) Base (2) Collector (3) Emitter
2SD1861
6.8
2.5
1.0 0.9 14.5 4.4
0.65Max.
0.5 (1) (2) (3)
2.54 2.54
1.05 0.45 Taping specifications
ROHM : ATV
(1) Emitter (2) Collector (3) Base
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current tran...
