Darlington
2SB1685
(70Ω) E B Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2641...
Darlington
2SB1685
(70Ω) E B Equivalent circuit C
Silicon
PNP Epitaxial Planar
Transistor (Complement to type 2SD2641) Application : Audio, Series
Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
sElectrical Characteristics
(Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg
Ratings –110 –110 –5 –6 –1
60(Tc=25°C) 150
–55 to +150
Unit V V V A A W °C °C
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
Conditions VCB=–110V
VEB=–5V IC=–30mA VCE=–4V, IC=–5A IC=–5A, IB=–5mA IC=–5A, IB=–5mA VCE=–12V, IE=0.5A VCB=–10V, f=1MHz
Ratings –100max –100max –110min 5000min∗ –2.5max –3.0max
100typ 110typ
Unit µA µA V
V V MHz pF
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2 ton tstg tf
(V) (Ω)
(A)
(V)
(V)
(mA)
(mA)
(µs)
(µs)
(µs)
–30 6
–5 –10 5
–5
5 1.1typ 3.2typ 1.1typ
External Dimensions MT-100(TO3P)
15.6±0.4 9.6
4.8±0.2 2.0±0.1
1.8 5.0±0.2
19.9±0.3 4.0 2.0
20.0min 4.0max
a ø3.2±0.1 b
2
3
1.05
+0.2 -0.1
0.65
+0.2 -0.1
5.45±0.1
5.45±0.1
BCE
1.4
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I C– V CE Characteristics (Typical)
–6
– 1 m––A00. .54mmAA
–0.3mA
–0.2mA –4
IB=–0.1mA –2
V CE( s a t ) – I B Characteristics (Typical)
–3
I C– V BE Temperature Characteristics (Typical)
(VCE=–4V) –6
–2 –4 –5A
IC=–3A –1 –2
Collector Current IC(A) –302˚5˚1C2(C5(C˚aCCsa(esCeTaseTeemTmp)ep)mp)
Collector-Emitter Saturation Voltage VCE...
