RF1S30N06LE

RFP30N06LE, RF1S30N06LE, SEMICONDUCTOR RF1S30N06LESM July 1995 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Features 30A, 60V rDS(ON) = 0.047Ω 2kV ESD Protected Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. These transistors incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD. Packages JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE DRAIN (FLANGE) A JEDEC TO-263AB GATE SOURCE MA A DRAIN (FLANGE) PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RFP30N06LE TO-220AB F30N06LE RF1S30N06LE TO-262AA 1S30N06L RF1S30N06LESM TO-263AB 1S30N06L NOTE: When ordering use the entire part number. Add suffix, 9A, to obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A. Formerly developmental type TA49027. Symbol Absolute Maximum Ratings TC = +25oC Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . ....