MBR60080CTR Datasheet (data sheet) PDF





MBR60080CTR Datasheet - Silicon Power Schottky Diode

MBR60080CTR   MBR60080CTR  

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Silicon Power Schottky Diode Features High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitiv e MBR60045CT thru MBR600100CTR VRRM = 45 V - 100 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 ° C, unless otherwise specified ("R" devi ces have leads reversed) Parameter Sy mbol Conditions MBR60045CT(R) MBR6006 0CT(R) MBR60080CT(R) MBR600100CT(R)

MBR60080CTR Datasheet - Silicon Power Schottky Diode

MBR60080CTR  
Unit Repetitive peak reverse voltage R MS reverse voltage DC blocking voltage Operating temperature Storage temperatu re VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 60 42 60 -55 to 150 -55 to 150 80 57 80 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 V V V °C °C Electrical characterist ics, at Tj = 25 °C, unless otherwise s pecified Parameter Symbol Co








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