2SC2904
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2904 is a silicon
epitaxial plana type transistor desi...
2SC2904
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI 2SC2904 is a silicon
epitaxial plana type
transistor designed for high power amplifiers in HF band.
FEATURES:
Internal Input Matching Network PG = 11.5 dB at 1000 W/30 MHz Omnigold™ Metalization System
MAXIMUM RATINGS
IC 22 A
VCBO
50 V
VCEO
20 V
VEBO
4.0 V
PDISS
200 W @ TC = 25 °C
TJ -55 °C to +175 °C
TSTG
-55 °C to +175 °C
θJC 0.75 °C/W
PACKAGE STYLE .500 6L FLG
CA
2x ØN FULL R
D
DIM
A B C D E F G H I J K L M N
BE .725/18,42
GF
H
M IN IM U M inches / mm .150 / 3.43
.210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08
.970 / 24.64 .090 / 2.29 .150 / 3.81
JI .045 / 1.14
.125 / 3.18 .725 / 18.42
.120 / 3.05
M K
L
M A X IM U M inches / mm .160 / 4.06
.220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18
.980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43
Common Emitter configuration
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 20 mA
BVCEO
IC = 100 mA
BVEBO
IE = 20 mA
ICBO
VCB = 15 V
IEBO
VCB = 3.0 V
hFE*
VCE = 10 V
IC = 1.0 A
PO ηC
VCE = 12.5 V
PIN = 7.0 W
NOTE: *Pulse test, PW=150µS. duty=5%
f = 30 MHz
MINIMUM TYPICAL MAXIMUM 50 20 4.0 5.0 5.0 10 180
UNITS V
V mA mA ---
100 110 55 60
W %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
Free Datasheet http://www.Datasheet...
