SMK0270F

Semiconductor SWITCHING REGULATOR APPLICATIONS SMK0270F Advanced Power MOSFET Features High Voltage: BVDSS=700V(Min.) Low Crss : Crss=6.0F(Typ.) Low gate charge : Qg=7.2nC(Typ.) Low RDS(on) :RDS(on)=6.3Ω(Max.) Ordering Information Type No. Marking SMK0270F SMK0270 Package Code TO-220F-3L PIN Connection D G GDS TO-220F-3L S Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range ② ② ① ① VDSS VGSS ID TC=25℃ TC=100℃ IDM PD IAS EAS IAR EAR TJ Tstg * Limited by maximum junction temperature Rating 700 ±30 2.0 1.3 8.0 25 2.0 41 2.0 1.8 150 -55~150 Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max 4.46 62.5 Unit V V A A A W A mJ A mJ °C °C Unit ℃/W KSD-T0O038-000 1 SMK0270F Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Symbol Test Condition Drain-source breakdown voltage Gate threshold voltage V(BR)DSS VGS(th) ID=250 ㎂, VGS=0V ID=250 ㎂, VGS= VDS Drain-source cut-off current IDSS VDS=700V, VGS=0V Gate leakage current Drain-source on-resistance Forward transfer conductance ④ ④ IGSS RDS(on) gfs VDS=0V, VGS=±30V VGS=10V, ID=1.0A VDS=10V, ID=1.0A Input ...