Document
Shanghai Jin-ec Electronic&Technology Co., Ltd
N N-CHANNEL MOSFET
JHW5N50 Package
MAIN CHARACTERISTICS
ID 5 A VDSS 500 V Rdson(@Vgs=10V) 1. Ω Qg 32 nC
z z z UPS
APPLICATIONS z High efficiency switch
mode power supplies z Electronic lamp ballasts
based on half bridge z UPS
z z Crss ( 17pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 17pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
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ABSOLUTE RATINGS (Tc=25℃)
Parameter
- Drain-Source Voltage
Drain Current -continuous
Symbol
Value JHW5N50
VDSS
500
ID T=25℃ T=100℃
5 2.9
( 1)
Drain Current - pulse
(note
1)
IDM
18
Gate-Source Voltage
VGSS
±30
( 2) Single Pulsed Avalanche Energy (note 2)
EAS
270
( 1) Avalanche Current(note 1)
IAR
5
( 1) Repetitive Avalanche Current (note 1)
EAR
7.3
( 3) Peak Diode Recovery dv/dt(note 3)
Power Dissipation
Operating and Storage Temperature Range
dv/dt
PD TC=25℃ -Derate above 25℃
TJ,TSTG
59 0.48
5.5 73 0.58
-55~+150
Maximum Lead Temperature for Soldering Purposes
TL
300
* *Drain current limited by maximum junction temperature
JHW5N50
Unit V 5* A 2.9* A 18* A V mJ A mJ
V/ns 38 W 0.3 W/℃
℃
℃
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ELECTRICAL CHARACTERISTICS
JHW5N50
Parameter Of f –Characteristics -
Drain-Source Voltage
Symbol
Tests conditions
BVDSS ID=250μA, VGS=0V
Min Typ Max Units 500 - - V
Breakdown Voltage Temperature Coefficient
ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃
- 0.54 - V/℃
Zero Gate Voltage Drain Current
IDSS
VDS=500V,VGS=0V, TC=25℃ VDS=400V, TC=125℃
- - 1 μA - - 10 μA
Gate-body leakage current, forward
IGSSF
VDS=0V, VGS =30V
- - 100 nA
Gate-body leakage current, reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
On-Characteristics Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
3.0 - 4.5 V
Static Drain-Source On-Resistance
RDS(ON) VGS =10V , ID=2.25A
- 1.16 1.6 Ω
Forward Transconductance
gfs
VDS = 40V, ID=2.25A(note 4)
-
5.2 -
S
Dynamic Characteristics
Input capacitance
Ciss
Output capacitance
Coss
VDS=25V, VGS =0V, f=1.0MHZ
- 800 1050 pF - 76 100 pF
Reverse transfer capacitance
Crss
- 17 22 pF
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ELECTRICAL CHARACTERISTICS
Switching Characteristics
Turn-On delay time Turn-On rise time
td(on) tr
VDD=250V,ID=5A,RG=25Ω (note 4,5)
Turn-Off delay time
td(off)
Turn-Off Fall time
tf
Total Gate Charge - Gate-Source charge - Gate-Drain charge
Qg Qgs Qgd
VDS =400V , ID=5A VGS =10V (note 4,5)
JHW5N50
- 15 40 ns - 40 90 ns - 85 180 ns - 45 100 ns - 32 44 nC - 3.7 - nC - 15 - nC
- Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain -Source Diode Forward Current
IS - - 5 A
Maximum Pulsed Drain-Source Diode Forward Current
ISM - - 18 A
Drain-Source Diode Forward Voltage
VSD VGS=0V, IS=4.5A
- - 1.4 V
Reverse recovery time Reverse recovery charge
trr VGS=0V, IS=4.5A
- 305 - ns
Qrr
dIF/dt=100A/μs (note 4)
- 2.6 - μC
THERMAL CHARACTERISTIC
Parameter
Symbol
Max
Unit
JHW5N50V/RJHW5N50C JHW5N50F
Thermal Resistance, Junction to Case
Rth(j-c)
2.05
1.71 3.31 ℃/W
Thermal Resistance, Junction to Ambient
Rth(j-A)
110
62.5 62.5 ℃/W
: 1: 2:L=24mH, IAS=5A, VDD=50V, RG=25 Ω,
TJ=25℃ 3:ISD ≤5A,di/dt ≤300A/μs,VDD≤BVDSS,
TJ=25℃ 4::≤300μs,≤2% 5:
Notes: 1:Pulse width limited by maximum junction temperature 2:L=24mH, IAS=5A, VDD=50V, RG=25 Ω,Starting
TJ=25℃ 3:ISD ≤5A,di/dt ≤300A/μs,VDD≤BVDSS, Starting
TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature
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ELECTRICAL CHARACTERISTICS (curves)
JHW5N50
On-Region Characteristics
Transfer Characteristics
VGS Top 15V
10V 8V
10 7V
6.5V 6V
5.5V Bottom 5V
ID [A]
10
25℃
150℃
1
ID [A]
Notes: 1 1. 250μs pulse test
2. TC=25℃
1 10
VDS [V]
On-Resistance Variation vs. Drain Current and Gate Voltage
Notes: 1.250μs pulse test 2.VDS=40V
0.1 2 4 6 8 10
VGS [V]
Body Diode Forward Voltage Variation vs. Source Current and Temperature
RDS(on) [ Ω ]
2.0
1.9
1.8
1.7 VGS=10V
1.6
1.5 VGS=20V
1.4
1.3
1.2 Note :Tj=25℃
1.1 02468
ID [A]
IDR [A]
10
25℃
1
150℃
Notes:
1. 250μs pulsetest
2. VGS=0V
0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD[V]
Capacitance Characteristics
VGS Gate Source Voltage[V]
Gate Charge Characteristics
12
VDS=400V
10
VDS=250V 8 VDS=100V
6
4
2
0 0 4 8 12 16 20 24 28 32 36
Qg Toltal Gate Charge [nC]
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BVDS(normalized) RD(on)(Normalizde)
ELECTRICAL CHARACTERISTICS (curves)
JHW5N50
Breakdown Voltage Variation vs. Temperature
1.2
On-Resistance Variation vs. Temperature
3.0
2.5
1.1 2.0
1.0 1.5
0.9 0.8
-50
Notes: 1. VGS=0V 2. ID=250μA
0 50 100 150
Tj [℃ ]
1.0 0.5 0.0
-50
0 50
Tj [ ℃ ]
Notes: 1. VGS=10V 2. ID=2.25A
100 150
Maximum Safe Operating Area For JHW5N50V/R/C
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ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve For JHW5N50V/R
JHW5N50
Transient Thermal Response Curve For JHW5N50S/B/C
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PACKAGE MECHANICAL DATA IP.