JHW5N60R

Shanghai Jin-ec Electronic& Technology Co., Ltd JHW5N60 N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID  A VDSS 600 V Rdson（@Vgs=10V） 2.5Ω Qg 27 nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 14pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 14pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JHW5N60V-O-V-N-B JHW5N60R-O-R-N-B JHW5N60S-O-S-N-B JHW5N60B-O-B-N-B JHW5N60C-O-C-N-B JHW5N60F-O-F-N-B JHW5N60V JHW5N60R JHW5N60S JHW5N60B JHW5N60C JHW5N60F Package IPAK DPAK TO-263 TO-262 TO-220C TO-220MF Halogen Free Packaging NO NO NO NO NO NO Tube Tube Tube Tube Tube Tube Device Weight 0.35 g(typ) 0.30 g(typ) 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ) 1/13 ABSOLUTE RATINGS (Tc=25℃) JHW5N60 Parameter － Drain-Source Voltage Symbol VDSS Value JHW5N60V/R JHW5N60S/B/C 600 Drain Current -continuous ID T=25℃ T=100℃ 4.5 2.6 （ 1） Drain Current - pulse （note 1） IDM 18 Gate-Source Voltage VGSS ±30 （ 2） Single Pulsed Avalanche Energy EAS 210 note 2） （ 1） Avalanche Current （note 1） IAR 4.5 （ 1） Repetitive Avalanche Current （note 1） EAR 10.0 （ 3） Peak Diode Recovery dv/dt 4.5 dv/dt （note 3） Power Dissipation PD TC=25℃ -Derate above 51 0.39 100 0.80 25℃ Operating and Storage Temperature Range TJ，TST...