JHW5N50V

Shanghai Jin-ec Electronic&Technology Co., Ltd N N-CHANNEL MOSFET JHW5N50 Package MAIN CHARACTERISTICS ID 5 A VDSS 500 V Rdson（@Vgs=10V） 1. Ω Qg 32 nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 17pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 17pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product 1/10 ABSOLUTE RATINGS (Tc=25℃) Parameter － Drain-Source Voltage Drain Current -continuous Symbol Value JHW5N50 VDSS 500 ID T=25℃ T=100℃ 5 2.9 （ 1） Drain Current - pulse （note 1） IDM 18 Gate-Source Voltage VGSS ±30 （ 2） Single Pulsed Avalanche Energy （note 2） EAS 270 （ 1） Avalanche Current（note 1） IAR 5 （ 1） Repetitive Avalanche Current （note 1） EAR 7.3 （ 3） Peak Diode Recovery dv/dt（note 3） Power Dissipation Operating and Storage Temperature Range dv/dt PD TC=25℃ -Derate above 25℃ TJ，TSTG 59 0.48 5.5 73 0.58 -55～+150 Maximum Lead Temperature for Soldering Purposes TL 300 * *Drain current limited by maximum junction temperature JHW5N50 Unit V 5* A 2.9* A 18* A V mJ A mJ V/ns 38 W 0.3 W/℃ ℃ ℃ 2/10 ELECTRICAL CHARACTERISTICS JHW5N50 Parameter Of f –Characteristics － Drain-Source Voltage Symbol Tests conditions BVDSS ID=250μA, VGS=0V Min Typ Max Units 500 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced t...