VRF2933

RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. VRF2933 VRF2933MP 50V, 300W, 150MHz D SS G FEATURES Improved Ruggedness V(BR)DSS = 170V 300W with 22dB Typ. Gain @ 30MHz, 50V Excellent Stability & Low IMD Common Source Configuration Available in Matched Pairs 3:1 Load VSWR Capability at Specified Operating Conditions Nitride Passivated Refractory Gold Metallization Improved Replacement for SD2933 Thermally Enhanced Package RoHS Compliant Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Continuous Drain Current @ TC = 25°C VGS Gate-Source Voltage PD Total Device dissipation @ TC = 25°C TSTG Storage Temperature Range TJ Operating Junction Temperature Max All Ratings: TC =25°C unless otherwise specified VRF2933(MP) Unit 170 V 40 A ±40 V 648 W -65 to 150 200 °C Static Electrical Characteristics Symbol V(BR)DSS VDS(ON) IDSS IGSS Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 20A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) gfs Forward Transconductance (VDS = 10V, ID = 20A) VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) Min Typ Max Unit 170 180 1.8 2.8 ...