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VRF2933MP Dataheets PDF



Part Number VRF2933MP
Manufacturers Microsemi
Logo Microsemi
Description RF POWER VERTICAL MOSFET
Datasheet VRF2933MP DatasheetVRF2933MP Datasheet (PDF)

RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. VRF2933 VRF2933MP 50V, 300W, 150MHz D SS G FEATURES • Improved Ruggedness V(BR)DSS = 170V • 300W with 22dB Typ. Gain @ 30MHz, 50V • Excellent Stability & Low IMD • Common Source Configuration • Available in Matched Pairs .

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RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. VRF2933 VRF2933MP 50V, 300W, 150MHz D SS G FEATURES • Improved Ruggedness V(BR)DSS = 170V • 300W with 22dB Typ. Gain @ 30MHz, 50V • Excellent Stability & Low IMD • Common Source Configuration • Available in Matched Pairs • 3:1 Load VSWR Capability at Specified Operating Conditions • Nitride Passivated • Refractory Gold Metallization • Improved Replacement for SD2933 • Thermally Enhanced Package • RoHS Compliant Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Continuous Drain Current @ TC = 25°C VGS Gate-Source Voltage PD Total Device dissipation @ TC = 25°C TSTG Storage Temperature Range TJ Operating Junction Temperature Max All Ratings: TC =25°C unless otherwise specified VRF2933(MP) Unit 170 V 40 A ±40 V 648 W -65 to 150 200 °C Static Electrical Characteristics Symbol V(BR)DSS VDS(ON) IDSS IGSS Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 20A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) gfs Forward Transconductance (VDS = 10V, ID = 20A) VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) Min Typ Max Unit 170 180 1.8 2.8 V 2.0 mA 2.0 μA 8 mhos 2.9 3.6 4.4 V Thermal Characteristics Symbol Characteristic RθJC Junction to Case Thermal Resistance Min Typ Max Unit 0.27 °C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-4941 Rev H 2 -2013 Dynamic Characteristics Symbol Parameter CISS Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Functional Characteristics Symbol Parameter GPS f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W ηD f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W ψ f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W Test Conditions VGS = 0V VDS = 50V f = 1MHz 3:1 VSWR - All Phase Angles VRF2933(MP) Min Typ Max Unit 740 400 pF 32 Min Typ Max Unit 20 25 dB 50 % No Degradation in Output Power 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves ID, DRAIN CURRENT (A) 55 7.5V 50 45 6.5V 40 35 6V 30 5.5V 25 20 5V 15 10 4.5V 5 4V 0 3.5V 0 5 10 15 20 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 1, Output Characteristics 1.0E−8 1.0E−9 Ciss Coss 1.0E−10 Crss 1.0E−11 0 10 20 30 40 50 60 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage ID, DRAIN CURRENT (V) ID, DRAIN CURRENT (A) 30 .


VRF2933 VRF2933MP 74HC154


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