Document
RF POWER VERTICAL MOSFET
The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
VRF2933 VRF2933MP
50V, 300W, 150MHz
D SS
G
FEATURES
• Improved Ruggedness V(BR)DSS = 170V • 300W with 22dB Typ. Gain @ 30MHz, 50V • Excellent Stability & Low IMD • Common Source Configuration
• Available in Matched Pairs
• 3:1 Load VSWR Capability at Specified Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• Improved Replacement for SD2933
• Thermally Enhanced Package
• RoHS Compliant
Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Continuous Drain Current @ TC = 25°C VGS Gate-Source Voltage
PD Total Device dissipation @ TC = 25°C TSTG Storage Temperature Range
TJ Operating Junction Temperature Max
All Ratings: TC =25°C unless otherwise specified
VRF2933(MP)
Unit
170 V
40 A
±40 V
648 W
-65 to 150 200
°C
Static Electrical Characteristics
Symbol V(BR)DSS VDS(ON)
IDSS IGSS
Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 20A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
gfs Forward Transconductance (VDS = 10V, ID = 20A)
VGS(TH)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
Min Typ Max Unit
170 180 1.8 2.8
V
2.0 mA
2.0 μA
8 mhos
2.9 3.6 4.4
V
Thermal Characteristics
Symbol
Characteristic
RθJC
Junction to Case Thermal Resistance
Min Typ Max Unit 0.27 °C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
050-4941 Rev H 2 -2013
Dynamic Characteristics
Symbol
Parameter
CISS Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
Functional Characteristics
Symbol
Parameter
GPS f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W ηD f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W ψ f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W
Test Conditions VGS = 0V VDS = 50V f = 1MHz
3:1 VSWR - All Phase Angles
VRF2933(MP)
Min Typ Max Unit 740 400 pF 32
Min Typ Max Unit
20 25
dB
50 %
No Degradation in Output Power
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
ID, DRAIN CURRENT (A)
55 7.5V
50
45 6.5V 40 35 6V
30 5.5V
25
20 5V
15
10 4.5V
5 4V
0 3.5V
0
5
10 15
20
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 1, Output Characteristics
1.0E−8
1.0E−9
Ciss Coss
1.0E−10
Crss
1.0E−11 0
10
20 30
40 50 60
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
ID, DRAIN CURRENT (V)
ID, DRAIN CURRENT (A)
30
.