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STPS10120C Dataheets PDF



Part Number STPS10120C
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Power Schottky rectifier
Datasheet STPS10120C DatasheetSTPS10120C Datasheet (PDF)

STPS10120C Datasheet 120 V power Schottky rectifier A1 A2 K K A2 A1 K TO-220AB Product status STPS10120C Product summary IF(AV) 2x5A VRRM 120 V Tj(max.) 175 °C VF(typ.) 0.64 V Features • High junction temperature capability • Low leakage current • Good trade off between leakage current and forward voltage drop • Avalanche capability • ECOPACK®2 compliant Applications • Switching diode • SMPS • DC/DC converter • Telecom power • LED lighting • Notebook adapter Description This dual .

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STPS10120C Datasheet 120 V power Schottky rectifier A1 A2 K K A2 A1 K TO-220AB Product status STPS10120C Product summary IF(AV) 2x5A VRRM 120 V Tj(max.) 175 °C VF(typ.) 0.64 V Features • High junction temperature capability • Low leakage current • Good trade off between leakage current and forward voltage drop • Avalanche capability • ECOPACK®2 compliant Applications • Switching diode • SMPS • DC/DC converter • Telecom power • LED lighting • Notebook adapter Description This dual diode common cathode Schottky rectifier is suited for high frequency switched mode power supplies. Packaged in TO-220AB, the STPS10120C is optimized for use to enhance the reliability of the application. DS13723 - Rev 2 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com STPS10120C Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Average forward current, δ = 0.5, square wave Tc = 160 °C Tc = 155 °C Per diode Per device IFSM Surge non repetitive forward current tp = 10 ms sinusoidal PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C Tstg Storage temperature range Tj Maximum operating junction temperature (1) 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Value 120 30 5 10 120 215 -65 to +175 +175 Unit V A A A W °C °C Symbol Rth(j-c) Rth(c) Table 2. Thermal resistance parameters Junction to case Coupling Parameter Per diode Total Max. value 3.8 2.3 0.7 Unit °C/W °C/W When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) For more information, please refer to the following application note : • AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol Parameter IR (1) Reverse leakage current VF (2) Forward voltage drop 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp =380 µs, δ < 2% Test conditions Tj = 25 °C Tj = 125 °C VR = VRRM Tj = 25 °C Tj = 125 °C IF = 5 A Tj = 25 °C Tj = 125 °C IF = 10 A Min. Typ. Max. -6 -13 - 0.85 - 0.64 0.70 - 0.96 - 0.73 0.80 To evaluate the conduction losses, use the following equation: P = 0.60 x IF(AV) + 0.02 x IF 2 (RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode Unit µA mA V DS13723 - Rev 2 page 2/9 STPS10120C Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current (per diode) 4.5 PF(AV)(W) 4.0 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 3.5 δ=1 3.0 2.5 2.0 1.5 1.0 T 0.5 IF(AV)(A) δ=tp/T tp 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode) IF(AV)(A) 6 5 Rth(j-a)=Rth(j-c) 4 Rth(j-a)=30° C/W 3 TO-220AB 2 T 1 δ=tp/T 0 0 25 tp 50 Tamb(°C) 7 5 100 125 150 175 Figure 3. Normalized avalanche power derating versus pulse duration (Tj = 125 °C) PARM (t p ) 1 PARM(10 µs) 0.1 0.01 0.001 1 t p(µs) 10 100 1000 Figure 4. Relative variation of thermal impedance junction to case versus pulse duration 1.0 Zth(j-c) /Rth(j-c) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single pulse 0.0 1.E-03 1.E-02 tp(s) 1.E-01 1.E+00 DS13723 - Rev 2 page 3/9 STPS10120C Characteristics (curves) Figure 5. Reverse leakage current versus reverse voltage applied (typical values, per diode) IR(µA) 1.E+03 1.E+02 1.E+01 Tj=125°C Tj=100°C Tj=75°C 1.E+00 Tj=50°C 1.E-01 Tj=25°C 1.E-02 0 VR (V) 10 2 0 3 0 4 0 5 0 6 0 70 8 0 9 0 100 110 120 Figure 6. Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C 100 10 1 VR(V) 10 100 1000 Figure 7. Forward voltage drop versus forward current (per diode) IF(A) 200 180 160 140 120 Tj=125°C (maximum values) 100 80 Tj=125°C (typical values) Tj=25°C (maximum values) 60 40 20 VF(V) 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 DS13723 - Rev 2 page 4/9 STPS10120C Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 Package information • Epoxy meets UL 94,V0 • Cooling method: by conduction (C) • Recommended torque value: 0.55 N·m • Maximum torque value: 0.70 N·m Figure 8. TO-220AB package outline DS13723 - Rev 2 page 5/9 ST.


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