OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up ...
OptiMOS® Power-
Transistor
Features N-channel Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested
IPB80N04S2L-03 IPP80N04S2L-03
Product Summary V DS R DS(on),max (SMD version) ID
40 V 3.1 mΩ 80 A
PG-TO263-3-2
PG-TO220-3-1
Type IPB80N04S2L-03 IPP80N04S2L-03
Package
Ordering Code Marking
PG-TO263-3-2 SP0002-20158 2N04L03
PG-TO220-3-1 SP0002-19063 2N04L03
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
I D,pulse T C=25 °C E AS I D=80A V GS P tot T C=25 °C T j, T stg
Value 80
80
320 810 ±20 300 -55 ... +175
Unit A
mJ V W °C
Rev. 1.0
page 1
2006-03-02
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area5)
IPB80N04S2L-03 IPP80N04S2L-03
min.
Values typ.
Unit max.
- - 0.5 K/W - - 62 - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage
V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D=250 µA
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