IPD25N06S2-40

OptiMOS® Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested IPD25N06S2-40 Product Summary V DS R DS(on),max (SMD version) ID 55 V 40 mΩ 29 A PG-TO252-3-11 Type IPD25N06S2-40 Package Marking PG-TO252-3-11 2N0640 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current1) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=25A Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 29 21 116 80 ±20 68 -55 ... +175 55/175/56 Unit A mJ V W °C Rev. 1.0 page 1 2006-07-18 IPD25N06S2-40 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area2) min. Values typ. Unit max. - - 2.2 K/W - - 100 - - 75 - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=26 µA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T...