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IPD250N06N3G Dataheets PDF



Part Number IPD250N06N3G
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPD250N06N3G DatasheetIPD250N06N3G Datasheet (PDF)

Type OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications Type IPD250N06N3 G Product Summary V DS R DS(on),max ID IPD250N06N3 G 60 V 25 mΩ 28 A Package Marking PG-TO252-3 250N06N Maximum ratings, at T j=25 °C, unless oth.

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Type OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications Type IPD250N06N3 G Product Summary V DS R DS(on),max ID IPD250N06N3 G 60 V 25 mΩ 28 A Package Marking PG-TO252-3 250N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Pulsed drain current2) I D,pulse Avalanche energy, single pulse3) E AS Gate source voltage V GS 1)J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C T C=25 °C I D=20 A, R GS=25 Ω Value 28 20 112 13 ±20 Unit A mJ V Rev.2.0 page 1 2008-11-26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg IEC climatic category; DIN IEC 68-1 IPD250N06N3 G Value 36 -55 ... 175 55/175/56 Unit W °C Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm² cooling area4) - - 4.2 K/W - 75 - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=11 µA I DSS V DS=60 V, V GS=0 V, T j=25 °C 60 2 - 3 0.1 -V 4 1 µA V DS=60 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current Drain-source on-state resistance Gate resistance I GSS R DS(on) RG V GS=20 V, V DS=0 V V GS=10 V, I D=28 A - 10 100 nA - 20.7 25 mΩ - 0.9 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=28 A 12 25 -S 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev.2.0 page 2 2008-11-26 Parameter Symbol Conditions IPD250N06N3 G min. Values typ. Unit max. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss C oss Crss t d(on) tr t d(off) tf V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=28 A, R G=3 Ω Gate Charge Characteristics5) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=30 V, I D=28 A, V GS=0 to 10 V V DD=30 V, V GS=0 V Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T C=25 °C V GS=0 V, I F=28 A, T j=25 °C V R=30 V, I F=28A, di F/dt =100 A/µs 5) See figure 16 for gate charge parameter definition - - - - - 920 1200 pF 200 270 912 - ns 313 3- 6 - nC 31411 15 6 -V 9 12 - 28 A - 112 1.0 1.2 V 32 - ns 29 - nC Rev.2.0 page 3 2008-11-26 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥10 V IPD250N06N3 G 40 30 25 30 20 P tot [W] I D [A] 20 15 10 10 5 0 0 50 100 T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 103 150 0 200 0 50 100 150 T C [°C] 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 10 200 I D [A] Z thJC [K/W] 102 101 100 10-1 10-1 Rev.2.0 limited by on-state resistance 1 µs 10 µs 100 µs 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 single pulse 1 ms 100 101 V DS [V] DC 102 0.01 0 10-6 page 4 0 10-5 00 10-4 10-3 t p [s] 0 10-2 0 10-1 2008-11-26 I D [A] R DS(on) [mΩ] 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 120 100 10 V 80 60 40 20 0 012 V DS [V] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 50 3 IPD250N06N3 G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 48 5.5 V 6 V 44 7V 8V 8 V 40 36 7V 6.5 V 6V 5.5 V 5V 4.5 V 4 32 28 24 20 16 0 10 V 20 40 60 80 100 I D [A] 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 120 40 40 30 20 10 0 0 Rev.2.0 I D [A] g fs [S] 175 °C 25 °C 246 V GS [V] 30 20 10 0 80 page 5 10 20 30 40 50 60 I D [A] 2008-11-26 9 Drain-source on-state resistance R DS(on)=f(T j); I D=28 A; V GS=10 V IPD250N06N3 G 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS 50 5 45 4 40 R DS(on) [mΩ] V GS(th) [V] 35 30 max 25 typ 20 15 110 µA 3 11µA 2 1 10 -60 -20 20 60 100 140 180 T j [°C] 0 -60 -20 20 60 100 140 180 T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 104 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 1000 C [pF] I F [A] Ciss 103 Coss 102 Crss 101 100 10.


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