Document
Type
OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications
Type
IPD250N06N3 G
Product Summary V DS R DS(on),max ID
IPD250N06N3 G
60 V 25 mΩ 28 A
Package Marking
PG-TO252-3 250N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current2)
I D,pulse
Avalanche energy, single pulse3)
E AS
Gate source voltage
V GS
1)J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information
V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C T C=25 °C I D=20 A, R GS=25 Ω
Value
28 20 112 13 ±20
Unit A
mJ V
Rev.2.0
page 1
2008-11-26
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation Operating and storage temperature
P tot T C=25 °C T j, T stg
IEC climatic category; DIN IEC 68-1
IPD250N06N3 G
Value 36
-55 ... 175 55/175/56
Unit W °C
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm² cooling area4)
-
- 4.2 K/W - 75 - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=11 µA
I DSS
V DS=60 V, V GS=0 V, T j=25 °C
60 2
-
3
0.1
-V 4
1 µA
V DS=60 V, V GS=0 V, T j=125 °C
-
10 100
Gate-source leakage current Drain-source on-state resistance
Gate resistance
I GSS R DS(on) RG
V GS=20 V, V DS=0 V V GS=10 V, I D=28 A
- 10 100 nA
-
20.7
25 mΩ
- 0.9 - Ω
Transconductance
g fs
|V DS|>2|I D|R DS(on)max, I D=28 A
12
25
-S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev.2.0
page 2
2008-11-26
Parameter
Symbol Conditions
IPD250N06N3 G
min.
Values typ.
Unit max.
Dynamic characteristics
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
C iss C oss Crss t d(on) tr t d(off) tf
V GS=0 V, V DS=30 V, f =1 MHz
V DD=30 V, V GS=10 V, I D=28 A, R G=3 Ω
Gate Charge Characteristics5) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge
Q gs Q g(th) Q gd Q sw Qg V plateau Q oss
V DD=30 V, I D=28 A, V GS=0 to 10 V
V DD=30 V, V GS=0 V
Reverse Diode Diode continuous forward current Diode pulse current
Diode forward voltage
Reverse recovery time Reverse recovery charge
IS I S,pulse
V SD
t rr Q rr
T C=25 °C
V GS=0 V, I F=28 A, T j=25 °C
V R=30 V, I F=28A, di F/dt =100 A/µs
5) See figure 16 for gate charge parameter definition
-
-
-
-
-
920 1200 pF 200 270
912 - ns 313 3-
6 - nC 31411 15 6 -V 9 12
- 28 A - 112
1.0 1.2 V
32 - ns 29 - nC
Rev.2.0
page 3
2008-11-26
1 Power dissipation P tot=f(T C)
2 Drain current I D=f(T C); V GS≥10 V
IPD250N06N3 G
40 30
25 30
20
P tot [W] I D [A]
20 15
10 10
5
0 0 50 100 T C [°C]
3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p
103
150
0 200 0
50 100 150 T C [°C]
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
10
200
I D [A] Z thJC [K/W]
102
101
100
10-1 10-1
Rev.2.0
limited by on-state resistance
1 µs 10 µs 100 µs
0.5
1 0.2
0.1 0.05
0.02
0.1 0.01
single pulse
1 ms
100 101
V DS [V]
DC
102
0.01 0 10-6
page 4
0
10-5
00
10-4
10-3
t p [s]
0
10-2
0
10-1
2008-11-26
I D [A]
R DS(on) [mΩ]
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
120
100
10 V
80
60
40
20
0 012
V DS [V]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
50
3
IPD250N06N3 G
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
48
5.5 V 6 V
44
7V
8V
8 V 40
36
7V
6.5 V
6V 5.5 V
5V 4.5 V
4
32 28
24
20
16 0
10 V
20 40 60 80 100 I D [A]
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
120
40
40
30
20
10
0 0
Rev.2.0
I D [A] g fs [S]
175 °C
25 °C
246 V GS [V]
30
20
10
0 80
page 5
10 20 30 40 50 60 I D [A]
2008-11-26
9 Drain-source on-state resistance R DS(on)=f(T j); I D=28 A; V GS=10 V
IPD250N06N3 G 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS
50 5
45
4 40
R DS(on) [mΩ] V GS(th) [V]
35
30
max
25
typ
20
15
110 µA
3
11µA
2
1
10 -60 -20 20
60 100 140 180
T j [°C]
0
-60 -20 20
60 100 140 180
T j [°C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
1000
C [pF] I F [A]
Ciss
103
Coss
102
Crss
101
100 10.